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Results: 1-19 |
Results: 19
THEORETICAL AND EXPERIMENTAL-STUDY OF THE QUASI-STATIC CAPACITANCE OFMETAL-INSULATOR HYDROGENATED AMORPHOUS-SILICON STRUCTURES - STRONG EVIDENCE FOR THE DEFECT-POOL MODEL
Authors: KLEIDER JP DAYOUB F
Citation: Jp. Kleider et F. Dayoub, THEORETICAL AND EXPERIMENTAL-STUDY OF THE QUASI-STATIC CAPACITANCE OFMETAL-INSULATOR HYDROGENATED AMORPHOUS-SILICON STRUCTURES - STRONG EVIDENCE FOR THE DEFECT-POOL MODEL, Physical review. B, Condensed matter, 58(16), 1998, pp. 10401-10414
FROM AMORPHOUS TO POLYCRYSTALLINE THIN-FILMS - DEPENDENCE ON ANNEALING TIME OF STRUCTURAL AND ELECTRONIC-PROPERTIES
Authors: MOHAMMEDBRAHIM T KISSION K BRIAND D SARRET M BONNAUD O KLEIDER JP LONGEAUD C LAMBERT B
Citation: T. Mohammedbrahim et al., FROM AMORPHOUS TO POLYCRYSTALLINE THIN-FILMS - DEPENDENCE ON ANNEALING TIME OF STRUCTURAL AND ELECTRONIC-PROPERTIES, Journal of non-crystalline solids, 230, 1998, pp. 962-966
PROPERTIES OF A NEW A-SI-H-LIKE MATERIAL - HYDROGENATED POLYMORPHOUS SILICON
Authors: LONGEAUD C KLEIDER JP CABARROCAS PRI HAMMA S MEAUDRE R MEAUDRE M
Citation: C. Longeaud et al., PROPERTIES OF A NEW A-SI-H-LIKE MATERIAL - HYDROGENATED POLYMORPHOUS SILICON, Journal of non-crystalline solids, 230, 1998, pp. 96-99
DEFECT CREATION AND REMOVAL IN HYDROGENATED AMORPHOUS-SILICON PREDICTED BY THE DEFECT-POOL MODEL AND REVEALED BY THE QUASI-STATIC CAPACITANCE OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
Authors: KLEIDER JP DAYOUB F
Citation: Jp. Kleider et F. Dayoub, DEFECT CREATION AND REMOVAL IN HYDROGENATED AMORPHOUS-SILICON PREDICTED BY THE DEFECT-POOL MODEL AND REVEALED BY THE QUASI-STATIC CAPACITANCE OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES, Physical review. B, Condensed matter, 55(16), 1997, pp. 10181-10184
COMPARISON OF AL SIN/A-SI-H AND AL/SIO2/A-SI-H TOP GATE STRUCTURES UNDER THERMAL BIAS STRESSES/
Authors: DAYOUB F KLEIDER JP MENCARAGLIA D
Citation: F. Dayoub et al., COMPARISON OF AL SIN/A-SI-H AND AL/SIO2/A-SI-H TOP GATE STRUCTURES UNDER THERMAL BIAS STRESSES/, Thin solid films, 296(1-2), 1997, pp. 137-140
SOURCE AND DRAIN PARASITIC RESISTANCES OF AMORPHOUS-SILICON TRANSISTORS - COMPARISON BETWEEN TOP NITRIDE AND BOTTOM NITRIDE CONFIGURATIONS
Authors: ROLLAND A RICHARD J KLEIDER JP MENCARAGLIA D
Citation: A. Rolland et al., SOURCE AND DRAIN PARASITIC RESISTANCES OF AMORPHOUS-SILICON TRANSISTORS - COMPARISON BETWEEN TOP NITRIDE AND BOTTOM NITRIDE CONFIGURATIONS, JPN J A P 1, 35(8), 1996, pp. 4257-4260
OPTICAL-BIAS EFFECT ON TRANSIENT ELECTRON-DRIFT MEASUREMENTS IN A-SI-H - IMPLICATIONS ON THE DISTRIBUTION AND CAPTURE CROSS-SECTIONS OF THEDANGLING BONDS
Authors: LONGEAUD C KLEIDER JP
Citation: C. Longeaud et Jp. Kleider, OPTICAL-BIAS EFFECT ON TRANSIENT ELECTRON-DRIFT MEASUREMENTS IN A-SI-H - IMPLICATIONS ON THE DISTRIBUTION AND CAPTURE CROSS-SECTIONS OF THEDANGLING BONDS, Physical review. B, Condensed matter, 53(24), 1996, pp. 16133-16136
THERMAL BIAS ANNEALING EXPERIMENTS ON ALUMINUM SILICON-NITRIDE HYDROGENATED AMORPHOUS-SILICON TOP GATE STRUCTURES
Authors: DAYOUB F KLEIDER JP LONGEAUD C MENCARAGLIA D REYNAUD J
Citation: F. Dayoub et al., THERMAL BIAS ANNEALING EXPERIMENTS ON ALUMINUM SILICON-NITRIDE HYDROGENATED AMORPHOUS-SILICON TOP GATE STRUCTURES, Journal of non-crystalline solids, 200, 1996, pp. 318-321
DENSITY-OF-STATES AND CAPTURE CROSS-SECTIONS IN ANNEALED AND LIGHT-SOAKED HYDROGENATED AMORPHOUS-SILICON LAYERS
Authors: LONGEAUD C KLEIDER JP
Citation: C. Longeaud et Jp. Kleider, DENSITY-OF-STATES AND CAPTURE CROSS-SECTIONS IN ANNEALED AND LIGHT-SOAKED HYDROGENATED AMORPHOUS-SILICON LAYERS, Journal of non-crystalline solids, 200, 1996, pp. 355-358
DENSITY-OF-STATES IN THE GAP OF CDTE-V DEDUCED FROM THE MODULATED PHOTOCURRENT TECHNIQUE
Authors: LONGEAUD C KLEIDER JP CUNIOT M
Citation: C. Longeaud et al., DENSITY-OF-STATES IN THE GAP OF CDTE-V DEDUCED FROM THE MODULATED PHOTOCURRENT TECHNIQUE, Optical materials, 4(2-3), 1995, pp. 271-275
BIAS STRESS STUDIES OF A-SIN-H A-SI-H MIS STRUCTURES FROM QUASI-STATIC CAPACITANCE MEASUREMENTS/
Authors: REYNAUD J KLEIDER JP MENCARAGLIA D
Citation: J. Reynaud et al., BIAS STRESS STUDIES OF A-SIN-H A-SI-H MIS STRUCTURES FROM QUASI-STATIC CAPACITANCE MEASUREMENTS/, Journal of non-crystalline solids, 187, 1995, pp. 313-318
THEORETICAL-STUDY OF THE QUASI-STATIC CAPACITANCE OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES IN AMORPHOUS-SEMICONDUCTORS
Authors: KLEIDER JP MENCARAGLIA D
Citation: Jp. Kleider et D. Mencaraglia, THEORETICAL-STUDY OF THE QUASI-STATIC CAPACITANCE OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES IN AMORPHOUS-SEMICONDUCTORS, Journal of applied physics, 78(6), 1995, pp. 3857-3866
SUBSTRATE-TEMPERATURE EFFECT ON THE STABILITY OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED AT HIGH-RATES
Authors: KLEIDER JP LONGEAUD C BARRANCODIAZ M MORIN P CABARROCAS PRI
Citation: Jp. Kleider et al., SUBSTRATE-TEMPERATURE EFFECT ON THE STABILITY OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED AT HIGH-RATES, Journal of applied physics, 78(1), 1995, pp. 317-320
TRAPPING AND RECOMBINATION VIA DANGLING BONDS IN AMORPHOUS AND GLASSYSEMICONDUCTORS UNDER STEADY-STATE CONDITIONS - APPLICATION TO THE MODULATED PHOTOCURRENT EXPERIMENT
Authors: LONGEAUD C KLEIDER JP
Citation: C. Longeaud et Jp. Kleider, TRAPPING AND RECOMBINATION VIA DANGLING BONDS IN AMORPHOUS AND GLASSYSEMICONDUCTORS UNDER STEADY-STATE CONDITIONS - APPLICATION TO THE MODULATED PHOTOCURRENT EXPERIMENT, Physical review. B, Condensed matter, 48(12), 1993, pp. 8715-8741
DENSITY-OF-STATES IN THIN-FILM TRANSISTORS FROM THE MODULATED PHOTOCURRENT TECHNIQUE - APPLICATION TO THE STUDY OF METASTABILITIES
Authors: KLEIDER JP LONGEAUD C MENCARAGLIA D ROLLAND A VITROU P RICHARD J
Citation: Jp. Kleider et al., DENSITY-OF-STATES IN THIN-FILM TRANSISTORS FROM THE MODULATED PHOTOCURRENT TECHNIQUE - APPLICATION TO THE STUDY OF METASTABILITIES, Journal of non-crystalline solids, 166, 1993, pp. 739-742
OPTIMIZATION OF THE HYDROGEN CONTENT IN A-SI-H DEPOSITED AT HIGH-RATEBY DE MAGNETRON SPUTTERING
Authors: BELDI N SIB J CHAHED L SMAIL T MOHAMMEDBRAHIM T DJEBBOUR Z KLEIDER JP LONGEAUD C MENCARAGLIA D
Citation: N. Beldi et al., OPTIMIZATION OF THE HYDROGEN CONTENT IN A-SI-H DEPOSITED AT HIGH-RATEBY DE MAGNETRON SPUTTERING, Journal of non-crystalline solids, 166, 1993, pp. 309-312
INFLUENCE ON THE TRANSPORT-PROPERTIES OF THE DEPOSITION TEMPERATURE OF A-SI-H FILMS DEPOSITED FROM MIXTURES OF SILANE IN HELIUM AT HIGH DEPOSITION RATES
Authors: KLEIDER JP LONGEAUD C CABARROCAS PRI
Citation: Jp. Kleider et al., INFLUENCE ON THE TRANSPORT-PROPERTIES OF THE DEPOSITION TEMPERATURE OF A-SI-H FILMS DEPOSITED FROM MIXTURES OF SILANE IN HELIUM AT HIGH DEPOSITION RATES, Journal of non-crystalline solids, 166, 1993, pp. 403-406
DETERMINATION OF THE DENSITY-OF-STATES IN P-DOPED HYDROGENATED AMORPHOUS-SILICON BY MEANS OF THE MODULATED PHOTOCURRENT EXPERIMENT
Authors: LONGEAUD C KLEIDER JP MENCARAGLIA D AMARAL A CARVALHO CN
Citation: C. Longeaud et al., DETERMINATION OF THE DENSITY-OF-STATES IN P-DOPED HYDROGENATED AMORPHOUS-SILICON BY MEANS OF THE MODULATED PHOTOCURRENT EXPERIMENT, Journal of non-crystalline solids, 166, 1993, pp. 423-426
ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON TRANSISTORS AND MIS-DEVICES - COMPARATIVE-STUDY OF TOP NITRIDE AND BOTTOM NITRIDE CONFIGURATIONS
Authors: ROLLAND A RICHARD J KLEIDER JP MENCARAGLIA D
Citation: A. Rolland et al., ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON TRANSISTORS AND MIS-DEVICES - COMPARATIVE-STUDY OF TOP NITRIDE AND BOTTOM NITRIDE CONFIGURATIONS, Journal of the Electrochemical Society, 140(12), 1993, pp. 3679-3683
Risultati: 1-19 |