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SIMULATION OF SILICON DRY-ETCHING THROUGH A MASK IN LOW-PRESSURE FLUORINE-BASED PLASMA
Authors:
KNIZIKEVICIUS R GALDIKAS A GRIGONIS A PRANEVICIUS L RUTKUNIENE Z
Citation:
R. Knizikevicius et al., SIMULATION OF SILICON DRY-ETCHING THROUGH A MASK IN LOW-PRESSURE FLUORINE-BASED PLASMA, Vacuum, 47(12), 1996, pp. 1473-1477
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