Authors: KOBAYASHI NP KOBAYASHI JT CHOI WJ DAPKUS PD ZHANG XG RICH DH

Citation: Np. Kobayashi et al., GROWTH OF SINGLE-CRYSTAL GAN ON A SI SUBSTRATE USING OXIDIZED ALAS ASAN INTERMEDIATE LAYER, Journal of crystal growth, 190, 1998, pp. 172-177

Authors: KOBAYASHI NP KOBAYASHI JT CHOI WJ DAPKUS PD

Citation: Np. Kobayashi et al., SINGLE-CRYSTAL ALPHA-GAN GROWN ON A ALPHA-GA2O3 TEMPLATE LAYER, Applied physics letters, 73(11), 1998, pp. 1553-1555

Authors: ZHANG X RICH DH KOBAYASHI JT KOBAYASHI NP DAPKUS PD

Citation: X. Zhang et al., CARRIER RELAXATION AND RECOMBINATION IN AN INGAN GAN QUANTUM-WELL PROBED WITH TIME-RESOLVED CATHODOLUMINESCENCE/, Applied physics letters, 73(10), 1998, pp. 1430-1432

Authors: KOBAYASHI JT KOBAYASHI NP DAPKUS PD

Citation: Jt. Kobayashi et al., NUCLEATION AND GROWTH-BEHAVIOR FOR GAN GROWN ON (0001)SAPPHIRE VIA MULTISTEP GROWTH APPROACH, Journal of electronic materials, 26(10), 1997, pp. 1114-1117

Authors: KOBAYASHI NP KOBAYASHI JT DAPKUS PD CHOI WJ BOND AE ZHANG X RICH DH

Citation: Np. Kobayashi et al., GAN GROWTH ON SI(111) SUBSTRATE USING OXIDIZED ALAS AS AN INTERMEDIATE LAYER, Applied physics letters, 71(24), 1997, pp. 3569-3571