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Results: 2
SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEX SI STRAINED-LAYERS IN A TUBULAR HOT-WALL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION SYSTEM/
Authors: WANG WC DENTON JP NEUDECK GW LEE IM TAKOUDIS CG KOH MTK KVAM EP
Citation: Wc. Wang et al., SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEX SI STRAINED-LAYERS IN A TUBULAR HOT-WALL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION SYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 138-141
PROCESS IMPROVEMENTS IN THE SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEX SISTRAINED LAYERS IN A CONVENTIONAL HOT-WALL LPCVD SYSTEM/
Authors: LEE IM TAKOUDIS CG WANG WC DENTON JP NEUDECK GW KOH MTK KVAM EP
Citation: Im. Lee et al., PROCESS IMPROVEMENTS IN THE SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEX SISTRAINED LAYERS IN A CONVENTIONAL HOT-WALL LPCVD SYSTEM/, Journal of the Electrochemical Society, 144(3), 1997, pp. 1095-1099
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