Authors: KOLDYAEV VI VANDENBOSCH G DEFERM L

Citation: Vi. Koldyaev et al., A COMPREHENSIVE CLOSED-FORM MODEL FOR THE QUANTIZED ACCUMULATION LAYER IN MOS STRUCTURES, Solid-state electronics, 42(1), 1998, pp. 49-56

Authors: KOLDYAEV VI CLERIX A DEFERM L VANOVERSTRAETEN R

Citation: Vi. Koldyaev et al., IMPACT OF THE TRANSMISSION-LINE PROPERTIES OF A METAL ULTRATHIN SILICON DIOXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON THE EXTRACTED INVERSION-LAYER THICKNESS, Journal of applied physics, 83(4), 1998, pp. 2131-2138

Authors: KOLDYAEV VI

Citation: Vi. Koldyaev, STUDY OF THE INFLUENCE OF THE NONEQUILIBRIUM POINT-DEFECT CONCENTRATION GRADIENT ON THE DOPANT FLUX DURING ION-IMPLANTATION IN SILICON AT HIGH-TEMPERATURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(4), 1995, pp. 446-453