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Authors:
KOLDYAEV VI
CLERIX A
DEFERM L
VANOVERSTRAETEN R
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Citation: Vi. Koldyaev, STUDY OF THE INFLUENCE OF THE NONEQUILIBRIUM POINT-DEFECT CONCENTRATION GRADIENT ON THE DOPANT FLUX DURING ION-IMPLANTATION IN SILICON AT HIGH-TEMPERATURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(4), 1995, pp. 446-453