Authors: YI HJ DIAZ J WANG LJ ELIASHEVICH I KIM S WILLIAMS R ERDTMANN M HE X KOLEV E RAZEGHI M

Citation: Hj. Yi et al., OPTIMIZED STRUCTURE FOR INGAASP GAAS 808-NM HIGH-POWER LASERS/, Applied physics letters, 66(24), 1995, pp. 3251-3253

Authors: ELIASHEVICH JD ELIASHEVICH I MOBARHAN K KOLEV E WANG LJ GARBUZOV DZ RAZEGHI M

Citation: Jd. Eliashevich et al., INGAPINGAASP GAAS 0.808-MU-M SEPARATE-CONFINEMENT LASER-DIODES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, IEEE photonics technology letters, 6(2), 1994, pp. 132-134

Authors: DIAZ J YI HJ ERDTMANN M HE X KOLEV E GARBUZOV D BIGAN E RAZEGHI M

Citation: J. Diaz et al., EFFICIENCY OF PHOTOLUMINESCENCE AND EXCESS CARRIER CONFINEMENT IN INGAASP GAAS STRUCTURES PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 76(2), 1994, pp. 700-704

Authors: DIAZ J ELIASHEVICH I HE X YI H WANG L KOLEV E GARBUZOV D RAZEGHI M

Citation: J. Diaz et al., HIGH-POWER INGAASP GAAS 0.8-MU-M LASER-DIODES AND PECULIARITIES OF OPERATIONAL CHARACTERISTICS/, Applied physics letters, 65(8), 1994, pp. 1004-1005

Authors: MOBARHAN K JELEN C KOLEV E RAZEGHI M

Citation: K. Mobarhan et al., GAINASP INP 1.35 MU-M DOUBLE-HETEROSTRUCTURE LASER GROWN ON SILICON SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 74(1), 1993, pp. 743-745