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Results: 1-9 |
Results: 9
INFLUENCE OF GRAIN-BOUNDARY SCATTERING IN THE INFRARED RESPONSE OF SILICIDE SCHOTTKY-BARRIER DIODES
Authors: ROCA E LARSEN KK KOLODINSKI S MERTENS R
Citation: E. Roca et al., INFLUENCE OF GRAIN-BOUNDARY SCATTERING IN THE INFRARED RESPONSE OF SILICIDE SCHOTTKY-BARRIER DIODES, Journal of applied physics, 79(8), 1996, pp. 4426-4430
THEORETICAL INVESTIGATION OF COSI2 SI1-XGEX DETECTORS - INFLUENCE OF A SI TUNNELING BARRIER ON THE ELECTROOPTICAL CHARACTERISTICS/
Authors: CHU DP PEETERS FM KOLODINSKI S ROCA E
Citation: Dp. Chu et al., THEORETICAL INVESTIGATION OF COSI2 SI1-XGEX DETECTORS - INFLUENCE OF A SI TUNNELING BARRIER ON THE ELECTROOPTICAL CHARACTERISTICS/, Journal of applied physics, 79(2), 1996, pp. 1151-1156
POTENTIAL OF SI1-XGEX ALLOYS FOR AUGER GENERATION IN HIGHLY EFFICIENTSOLAR-CELLS
Authors: KOLODINSKI S WERNER JH QUEISSER HJ
Citation: S. Kolodinski et al., POTENTIAL OF SI1-XGEX ALLOYS FOR AUGER GENERATION IN HIGHLY EFFICIENTSOLAR-CELLS, Applied physics A: Materials science & processing, 61(5), 1995, pp. 535-539
FORMATION OF COSI2 ON STRAINED SI0.8GE0.2 USING A SACRIFICIAL SI LAYER
Authors: DONATON RA KOLODINSKI S CAYMAX M ROUSSEL P BENDER H BRIJS B MAEX K
Citation: Ra. Donaton et al., FORMATION OF COSI2 ON STRAINED SI0.8GE0.2 USING A SACRIFICIAL SI LAYER, Applied surface science, 91(1-4), 1995, pp. 77-81
INCREASE IN THE INFRARED RESPONSE OF SILICIDE SCHOTTKY-BARRIER DIODESBY GRAIN-BOUNDARY SCATTERING
Authors: ROCA E LARSEN KK KOLODINSKI S MERTENS R
Citation: E. Roca et al., INCREASE IN THE INFRARED RESPONSE OF SILICIDE SCHOTTKY-BARRIER DIODESBY GRAIN-BOUNDARY SCATTERING, Applied physics letters, 67(10), 1995, pp. 1372-1374
QUANTUM EFFICIENCIES EXCEEDING UNITY IN SILICON LEADING TO NOVEL SELECTION PRINCIPLES FOR SOLAR-CELL MATERIALS
Authors: KOLODINSKI S WERNER JH QUEISSER HJ
Citation: S. Kolodinski et al., QUANTUM EFFICIENCIES EXCEEDING UNITY IN SILICON LEADING TO NOVEL SELECTION PRINCIPLES FOR SOLAR-CELL MATERIALS, Solar energy materials and solar cells, 33(3), 1994, pp. 275-285
NOVEL OPTIMIZATION PRINCIPLES AND EFFICIENCY LIMITS FOR SEMICONDUCTORSOLAR-CELLS
Authors: WERNER JH KOLODINSKI S QUEISSER HJ
Citation: Jh. Werner et al., NOVEL OPTIMIZATION PRINCIPLES AND EFFICIENCY LIMITS FOR SEMICONDUCTORSOLAR-CELLS, Physical review letters, 72(24), 1994, pp. 3851-3854
QUANTUM EFFICIENCIES EXCEEDING UNITY DUE TO IMPACT IONIZATION IN SILICON SOLAR-CELLS
Authors: KOLODINSKI S WERNER JH WITTCHEN T QUEISSER HJ
Citation: S. Kolodinski et al., QUANTUM EFFICIENCIES EXCEEDING UNITY DUE TO IMPACT IONIZATION IN SILICON SOLAR-CELLS, Applied physics letters, 63(17), 1993, pp. 2405-2407
SILICON SOLAR-CELL OF 16.8 MU-M THICKNESS AND 14.7-PERCENT EFFICIENCY
Authors: WERNER JH KOLODINSKI S RAU U ARCH JK BAUSER E
Citation: Jh. Werner et al., SILICON SOLAR-CELL OF 16.8 MU-M THICKNESS AND 14.7-PERCENT EFFICIENCY, Applied physics letters, 62(23), 1993, pp. 2998-3000
Risultati: 1-9 |