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Results: 1-25/29
Authors:
PAN D
ZENG YP
KONG MY
Citation: D. Pan et al., NEW METHOD FOR THE GROWTH OF HIGHLY UNIFORM QUANTUM DOTS, Microelectronic engineering, 43-4, 1998, pp. 79-83
Authors:
LIU JP
KONG MY
LI JP
LIU XF
HUANG DD
SUN DZ
Citation: Jp. Liu et al., LOW-TEMPERATURE GROWTH-PROPERTIES OF SI1-XGEX BY DISILANE AND SOLID-GE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 193(4), 1998, pp. 535-540
Authors:
ZHANG JP
SUN DZ
WANG XL
LI XB
KONG MY
ZENG YP
LI JM
LIN LY
Citation: Jp. Zhang et al., THE EFFECT OF BURIED ALXGA1-XN ISOLATING LAYERS ON THE TRANSPORT-PROPERTIES OF GAN DEPOSITED ON SAPPHIRE SUBSTRATE BY MOLECULAR-BEAM EPITAXY USING NH3, Journal of crystal growth, 192(3-4), 1998, pp. 471-474
Authors:
ZHANG JP
SUN DZ
LI XB
WANG XL
FU RH
KONG MY
Citation: Jp. Zhang et al., THE GROWTH OF AN ALGAN GAN MODULATION-DOPED HETEROSTRUCTURE BY NH3 SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 192(1-2), 1998, pp. 93-96
Authors:
WANG HM
ZENG YP
ZHOU HW
KONG MY
Citation: Hm. Wang et al., TRICLINIC DEFORMATION AND ANISOTROPIC STRAIN RELAXATION OF AN INAS FILM ON A GAAS(001) SUBSTRATE MEASURED BY A SERIES OF SYMMETRICAL DOUBLE-CRYSTAL X-RAY-DIFFRACTION, Journal of crystal growth, 191(4), 1998, pp. 627-630
Authors:
ZHOU HW
ZENG YP
WANG HM
DONG JR
ZHU ZP
PAN L
KONG MY
Citation: Hw. Zhou et al., GROWTH AND TRANSPORT-PROPERTIES OF INAS THIN-FILMS ON GAAS, Journal of crystal growth, 191(3), 1998, pp. 361-364
Authors:
LI XB
SUN DZ
ZHANG JP
KONG MY
Citation: Xb. Li et al., GAN EPILAYERS GROWN AT HIGH GROWTH-RATE USING GAS-SOURCE MOLECULAR-BEAM EPITAXY METHOD, Journal of crystal growth, 191(1-2), 1998, pp. 31-33
Authors:
LI XB
SUN DZ
ZHANG JP
ZHU SR
KONG MY
Citation: Xb. Li et al., PROPERTIES OF GAN EPILAYERS WITH VARIOUS GROWTH-CONDITIONS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 191(1-2), 1998, pp. 34-38
Authors:
ZHANG JP
WANG XL
SUN DZ
LI XB
KONG MY
Citation: Jp. Zhang et al., HIGH-CONCENTRATION HYDROGEN IN UNINTENTIONALLY DOPED GAN, Journal of crystal growth, 190, 1998, pp. 566-569
Authors:
WANG HM
FAN TW
WU J
ZENG YP
DONG JR
KONG MY
Citation: Hm. Wang et al., EFFECTS OF GROWTH TEMPERATURE ON HIGHLY MISMATCHED INAS GROWN ON GAASSUBSTRATES BY MBE, Journal of crystal growth, 186(1-2), 1998, pp. 38-42
Authors:
LI XB
SUN DZ
KONG MY
YOON SF
Citation: Xb. Li et al., RAPID THERMAL ANNEALING PROCESSING OF GAN EPILAYER ON SAPPHIRE(0001), Journal of crystal growth, 186(1-2), 1998, pp. 298-301
Authors:
LI XB
SUN DZ
KONG MY
YOON SF
Citation: Xb. Li et al., STRUCTURAL IDENTIFICATION OF A CUBIC PHASE IN HEXAGONAL GAN FILMS GROWN ON SAPPHIRE BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 183(1-2), 1998, pp. 31-37
Authors:
LI XB
SUN DZ
DONG JR
LI JP
KONG MY
YOON SF
Citation: Xb. Li et al., PHOTOLUMINESCENCE INVESTIGATION OF GAINP GAAS MULTIPLE-QUANTUM WELLS GROWN ON (001) AND (311) B GAAS-SURFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 83(12), 1998, pp. 7900-7902
Authors:
ZHANG JP
SUN DZ
WANG XL
KONG MY
ZENG YP
LI JM
LIN LY
Citation: Jp. Zhang et al., FERMI-EDGE SINGULARITY OBSERVED IN A MODULATION-DOPED ALGAN GAN HETEROSTRUCTURE/, Applied physics letters, 73(17), 1998, pp. 2471-2472
Authors:
LI XB
SUN DZ
ZHANG JP
KONG MY
YOON SF
Citation: Xb. Li et al., INFLUENCE OF RAPID THERMAL ANNEALING ON THE OPTICAL-PROPERTIES OF GALLIUM NITRIDE GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(8), 1998, pp. 936-938
Authors:
LIU JP
LIU XF
LI JP
SUN DZ
KONG MY
Citation: Jp. Liu et al., GE COMPOSITION SATURATION BEHAVIOR DURING LOW-TEMPERATURE SI1-XGEX GROWTH BY DISILANE AND SOLID GE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 181(4), 1997, pp. 441-445
Authors:
PAN D
ZENG YP
WU J
KONG MY
Citation: D. Pan et al., GROWTH OF HIGH-QUALITY RELAXED IN0.3GA0.7AS GAAS SUPERLATTICES/, Journal of crystal growth, 181(3), 1997, pp. 297-300
STUDY OF GSMBE GROWTH AND CHARACTERISTICS OF HIGH-QUALITY STRAINED IN0.63GA0.37AS INP QUANTUM-WELLS/
Authors:
WANG XL
SUN DZ
KONG MY
HOU X
ZENG YP
Citation: Xl. Wang et al., STUDY OF GSMBE GROWTH AND CHARACTERISTICS OF HIGH-QUALITY STRAINED IN0.63GA0.37AS INP QUANTUM-WELLS/, Journal of crystal growth, 180(1), 1997, pp. 22-26
Authors:
YOON SF
LI XB
KONG MY
Citation: Sf. Yoon et al., SOME PROPERTIES OF GALLIUM NITRIDE FILMS GROWN ON (0001) ORIENTED SAPPHIRE SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 180(1), 1997, pp. 27-33
Authors:
WANG HM
ZENG YP
FAN TW
ZHOU HW
PAN D
DONG JR
KONG MY
Citation: Hm. Wang et al., CHARACTERISTICS OF INAS EPILAYERS FOR HALL-EFFECT DEVICES GROWN ON GAAS SUBSTRATES BY MBE, Journal of crystal growth, 179(3-4), 1997, pp. 658-660
Authors:
PAN D
ZENG YP
LI JM
ZHANG CH
KONG MY
WANG HM
WANG CY
WU J
Citation: D. Pan et al., INTERSUBBAND ABSORPTION FROM IN0.26GA0.74AS GAAS QUANTUM-DOT SUPERLATTICE/, Journal of crystal growth, 175, 1997, pp. 760-764
Authors:
WANG XL
SUN DZ
KONG MY
HOU X
ZENG YP
Citation: Xl. Wang et al., GSMBE GROWTH AND CHARACTERIZATION OF INXGA1-XAS INP STRAINED-LAYER MQWS IN A P-I-N CONFIGURATION/, Journal of crystal growth, 175, 1997, pp. 1254-1258
Authors:
PAN D
ZENG YP
WU J
WANG HM
CHANG CH
LI JM
KONG MY
Citation: D. Pan et al., SELF-FORMED INGAAS GAAS QUANTUM-DOT SUPERLATTICE AND DIRECT OBSERVATION ON STRAIN DISTRIBUTION IN THE CAPPED SUPERLATTICE/, Applied physics letters, 70(18), 1997, pp. 2440-2442
Authors:
WANG XL
SUN DZ
KONG MY
HOU X
ZENG YP
Citation: Xl. Wang et al., GSMBE GROWTH AND PL INVESTIGATION OF LATTICE-MATCHED INGAAS INP QUANTUM-WELLS/, Journal of crystal growth, 164(1-4), 1996, pp. 281-284
Authors:
PAN D
LI JM
ZENG YP
KONG MY
Citation: D. Pan et al., LONG-PERIOD 2-DIMENSIONAL GRATINGS FOR 8-12-MU-M QUANTUM-WELL INFRARED PHOTODETECTORS, Journal of applied physics, 80(12), 1996, pp. 7169-7171