Authors: KONGETIRA P NEUDECK GW TAKOUDIS CG

Citation: P. Kongetira et al., EXPRESSION FOR THE GROWTH-RATE OF SELECTIVE EPITAXIAL-GROWTH OF SILICON USING DICHLOROSILANE, HYDROGEN-CHLORIDE, AND HYDROGEN IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION PANCAKE REACTOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1902-1907