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Results: 1-10 |
Results: 10
TRACE RARE-GASES OPTICAL-EMISSION SPECTROSCOPY FOR DETERMINATION OF ELECTRON TEMPERATURES AND SPECIES CONCENTRATIONS IN CHLORINE-CONTAININGPLASMAS
Authors: DONNELLY VM MALYSHEV MV KORNBLIT A CIAMPA NA COLONELL JI LEE JTC
Citation: Vm. Donnelly et al., TRACE RARE-GASES OPTICAL-EMISSION SPECTROSCOPY FOR DETERMINATION OF ELECTRON TEMPERATURES AND SPECIES CONCENTRATIONS IN CHLORINE-CONTAININGPLASMAS, JPN J A P 1, 37(4B), 1998, pp. 2388-2393
EFFECTS OF PLASMA CONDITIONS ON THE SHAPES OF FEATURES ETCHED IN CL-2AND HBR PLASMAS - I - BULK CRYSTALLINE SILICON ETCHING
Authors: VYVODA MA LEE H MALYSHEV MV KLEMENS FP CERULLO M DONNELLY VM GRAVES DB KORNBLIT A LEE JTC
Citation: Ma. Vyvoda et al., EFFECTS OF PLASMA CONDITIONS ON THE SHAPES OF FEATURES ETCHED IN CL-2AND HBR PLASMAS - I - BULK CRYSTALLINE SILICON ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3247-3258
PERCENT DISSOCIATION OF CL-2 IN INDUCTIVELY-COUPLED, CHLORINE-CONTAINING PLASMAS
Authors: MALYSHEV MV DONNELLY VM KORNBLIT A CIAMPA NA
Citation: Mv. Malyshev et al., PERCENT DISSOCIATION OF CL-2 IN INDUCTIVELY-COUPLED, CHLORINE-CONTAINING PLASMAS, Journal of applied physics, 84(1), 1998, pp. 137-146
GATE TECHNOLOGY FOR 70 NM METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH ULTRATHIN (LESS-THAN-2 NM) OXIDES
Authors: TENNANT D KLEMENS F SORSCH T BAUMANN F TIMP G LAYADI N KORNBLIT A SAPJETA BJ ROSAMILIA J BOONE T WEIR B SILVERMAN P
Citation: D. Tennant et al., GATE TECHNOLOGY FOR 70 NM METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH ULTRATHIN (LESS-THAN-2 NM) OXIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2799-2805
POLYCIDE GATE ETCHING USING A HELICAL RESONATOR ON AN APPLIED MATERIALS PRECISION-5000 PLATFORM
Authors: CHANG CP KLEMENS FP MAYNARD HL LEE TC KORNBLIT A IBBOTSON DE
Citation: Cp. Chang et al., POLYCIDE GATE ETCHING USING A HELICAL RESONATOR ON AN APPLIED MATERIALS PRECISION-5000 PLATFORM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 646-651
MULTILAYER INORGANIC ANTIREFLECTIVE SYSTEM FOR USE IN 248 NM DEEP-ULTRAVIOLET LITHOGRAPHY
Authors: CIRELLI RA WEBER GR KORNBLIT A BAKER RM KLEMENS FP DEMARCO J PAI CS
Citation: Ra. Cirelli et al., MULTILAYER INORGANIC ANTIREFLECTIVE SYSTEM FOR USE IN 248 NM DEEP-ULTRAVIOLET LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4229-4233
ROLE OF ETCH PATTERN FIDELITY IN THE PRINTING OF OPTICAL PROXIMITY CORRECTED PHOTOMASKS
Authors: KORNBLIT A DEMARCO JJ GAROFALO J MIXON DA NOVEMBRE AE VAIDYA S KOOK T
Citation: A. Kornblit et al., ROLE OF ETCH PATTERN FIDELITY IN THE PRINTING OF OPTICAL PROXIMITY CORRECTED PHOTOMASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2944-2948
SUB-0.1 MU-M NMOS TRANSISTORS FABRICATED USING LASER-PLASMA POINT-SOURCE X-RAY-LITHOGRAPHY
Authors: RITTENHOUSE GE MANSFIELD WM KORNBLIT A CIRELLI RA TOMES D CELLER GK
Citation: Ge. Rittenhouse et al., SUB-0.1 MU-M NMOS TRANSISTORS FABRICATED USING LASER-PLASMA POINT-SOURCE X-RAY-LITHOGRAPHY, IEEE electron device letters, 16(7), 1995, pp. 322-324
ETCH DEPTH ESTIMATION OF LARGE-PERIOD SILICON GRATINGS WITH MULTIVARIATE CALIBRATION OF RIGOROUSLY SIMULATED DIFFRACTION PROFILES
Authors: NAQVI SSH KRUKAR RH MCNEIL JR FRANKE JE NIEMCZYK TM HAALAND DM GOTTSCHO RA KORNBLIT A
Citation: Ssh. Naqvi et al., ETCH DEPTH ESTIMATION OF LARGE-PERIOD SILICON GRATINGS WITH MULTIVARIATE CALIBRATION OF RIGOROUSLY SIMULATED DIFFRACTION PROFILES, Journal of the Optical Society of America. A, Optics, image science,and vision., 11(9), 1994, pp. 2485-2493
REACTIVE ION ETCHING PROFILE AND DEPTH CHARACTERIZATION USING STATISTICAL AND NEURAL-NETWORK ANALYSIS OF LIGHT-SCATTERING DATA
Authors: KRUKAR R KORNBLIT A CLARK LA KRUSKAL J LAMBERT D REITMAN EA GOTTSCHO RA
Citation: R. Krukar et al., REACTIVE ION ETCHING PROFILE AND DEPTH CHARACTERIZATION USING STATISTICAL AND NEURAL-NETWORK ANALYSIS OF LIGHT-SCATTERING DATA, Journal of applied physics, 74(6), 1993, pp. 3698-3706
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