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Results: 1-15 |
Results: 15
INVESTIGATION OF CHARGE-CARRIER MOBILITY AT LOW-TEMPERATURES IN NEUTRON TRANSMUTATION DOPED GAAS IRRADIATED WITH ELECTRONS
Authors: KORSHUNOV FP KURILOVICH NF PROKHORENKO TA
Citation: Fp. Korshunov et al., INVESTIGATION OF CHARGE-CARRIER MOBILITY AT LOW-TEMPERATURES IN NEUTRON TRANSMUTATION DOPED GAAS IRRADIATED WITH ELECTRONS, Doklady Akademii nauk BSSR, 41(6), 1997, pp. 54-58
THE INFLUENCE OF VACUUM ANNEALING ON PROP ERTIES OF BI(PB)-2223 SUPERCONDUCTOR AFTER GAMMA-IRRADIATION
Authors: GURINOVICH VA KONONYUK IF KORSHUNOV FP MAKARENKO LF
Citation: Va. Gurinovich et al., THE INFLUENCE OF VACUUM ANNEALING ON PROP ERTIES OF BI(PB)-2223 SUPERCONDUCTOR AFTER GAMMA-IRRADIATION, Doklady Akademii nauk BSSR, 41(2), 1997, pp. 50-54
RADIATIVE RECOMBINATION AND IMPURITY-DEFECT INTERACTIONS IN NUCLEAR-DOPED GALLIUM-ARSENIDE PRODUCED UNDER DIFFERENT IRRADIATION AND CRYSTAL-GROWTH CONDITIONS
Authors: BYKOVSKII VA UTENKO VI SHOKH VF KORSHUNOV FP SOLODOVNIKOV ES
Citation: Va. Bykovskii et al., RADIATIVE RECOMBINATION AND IMPURITY-DEFECT INTERACTIONS IN NUCLEAR-DOPED GALLIUM-ARSENIDE PRODUCED UNDER DIFFERENT IRRADIATION AND CRYSTAL-GROWTH CONDITIONS, Semiconductors, 30(7), 1996, pp. 685-689
A LUMINESCENCE STUDY OF DEFECTS AND INTERNAL STRAINS IN ION-IMPLANTEDSILICON-ON-SAPPHIRE FILMS
Authors: MUDRYI AV PATUK AI SHAKIN IA KORSHUNOV FP ZUEV VA
Citation: Av. Mudryi et al., A LUMINESCENCE STUDY OF DEFECTS AND INTERNAL STRAINS IN ION-IMPLANTEDSILICON-ON-SAPPHIRE FILMS, Materials chemistry and physics, 45(2), 1996, pp. 185-188
INFLUENCE OF ELECTRON-IRRADIATION AND ANNEALING ON THE PHOTOLUMINESCENCE OF SI GE SUPERLATTICES AND SI/GE QUANTUM-WELLS/
Authors: SOBOLEV NA KORSHUNOV FP SAUER R THONKE K KONIG U PRESTING H
Citation: Na. Sobolev et al., INFLUENCE OF ELECTRON-IRRADIATION AND ANNEALING ON THE PHOTOLUMINESCENCE OF SI GE SUPERLATTICES AND SI/GE QUANTUM-WELLS/, Journal of crystal growth, 167(3-4), 1996, pp. 502-507
FORMATION EFFICIENCY OF THE THERMOSTABLE RECOMBINATION CENTERS IN IRRADIATED SILICON P-N STRUCTURES
Authors: KORSHUNOV FP ZHDANOVICH NE MARCHENKO IG TROSHCHINSKY VT
Citation: Fp. Korshunov et al., FORMATION EFFICIENCY OF THE THERMOSTABLE RECOMBINATION CENTERS IN IRRADIATED SILICON P-N STRUCTURES, Doklady Akademii nauk BSSR, 40(5), 1996, pp. 49-53
SMALL-ANGLE SCATTERING OF 4,5 MEV ELECTRO NS CHANNELED IN PLANAR CHANNEL OF SILICON CRYSTAL(110)
Authors: KORSHUNOV FP KAZAR AP
Citation: Fp. Korshunov et Ap. Kazar, SMALL-ANGLE SCATTERING OF 4,5 MEV ELECTRO NS CHANNELED IN PLANAR CHANNEL OF SILICON CRYSTAL(110), Izvestia Akademii nauk SSSR. Seria fiziceskaa, 59(10), 1995, pp. 152-156
A MECHANISM OF NONMONOTONIC DOSE DEPENDEN CE OF CRITICAL-TEMPERATURE IN IRRADIATED HIGH-TEMPERATURE SUPERCONDUCTORS
Authors: GURINOVICH VA KONONYUK IF KORSHUNOV FP MAKARENKO LF
Citation: Va. Gurinovich et al., A MECHANISM OF NONMONOTONIC DOSE DEPENDEN CE OF CRITICAL-TEMPERATURE IN IRRADIATED HIGH-TEMPERATURE SUPERCONDUCTORS, Doklady Akademii nauk BSSR, 39(5), 1995, pp. 39-42
ANNEALING EFFECT ON THE TEMPERATURE-DEPEN DENCE OF THE BREAKDOWN VOLTAGE IN IRRADIATED SILICON P-N-JUNCTIONS
Authors: KORSHUNOV FP LASTOVSKY SB TROSHCHINSKY VT
Citation: Fp. Korshunov et al., ANNEALING EFFECT ON THE TEMPERATURE-DEPEN DENCE OF THE BREAKDOWN VOLTAGE IN IRRADIATED SILICON P-N-JUNCTIONS, Doklady Akademii nauk BSSR, 39(3), 1995, pp. 35-38
CHARACTERISTICS OF ELECTRON-BOMBARDED P-N-JUNCTIONS IN THE AVALANCHE-BREAKDOWN REGION
Authors: KORSHUNOV FP LASTOVSKII SB MARCHENKO IG
Citation: Fp. Korshunov et al., CHARACTERISTICS OF ELECTRON-BOMBARDED P-N-JUNCTIONS IN THE AVALANCHE-BREAKDOWN REGION, Semiconductors, 28(3), 1994, pp. 292-294
ROLE OF FIELD EFFECTS IN A DETERMINATION OF THE CONCENTRATION OF THERMAL DONORS IN SILICON BY DLTS METHOD
Authors: KOMAROV BA KORSHUNOV FP MURIN LI
Citation: Ba. Komarov et al., ROLE OF FIELD EFFECTS IN A DETERMINATION OF THE CONCENTRATION OF THERMAL DONORS IN SILICON BY DLTS METHOD, Semiconductors, 28(3), 1994, pp. 305-309
THE FORMATION OF LUMINESCENCE-CENTERS IN SILICON-CRYSTALS AFTER ELECTRON-IRRADIATION AND ION-IMPLANTATION AT 20-K
Authors: KORSHUNOV FP LARIONOVA TP MUDRYI AV PATUK AI SHAKIN IA
Citation: Fp. Korshunov et al., THE FORMATION OF LUMINESCENCE-CENTERS IN SILICON-CRYSTALS AFTER ELECTRON-IRRADIATION AND ION-IMPLANTATION AT 20-K, Physica status solidi. a, Applied research, 143(2), 1994, pp. 261-269
ELECTRICALLY ACTIVE HYDROGENOUS DEFECTS I N IRRADIATED N-SILICON
Authors: KORSHUNOV FP MARKEVICH VP MEDVEDEVA IF MURIN LI
Citation: Fp. Korshunov et al., ELECTRICALLY ACTIVE HYDROGENOUS DEFECTS I N IRRADIATED N-SILICON, Doklady Akademii nauk BSSR, 38(2), 1994, pp. 35-39
THE FORMATION OF RADIATION-INDUCED DEFECT IN SILICON, IRRADIATED BY ELECTRONS UNDER THE TEMPERATURES OF 20-K-300-K
Authors: KORSHUNOV FP MUDRY AV PATUK AI SHAKIN IA
Citation: Fp. Korshunov et al., THE FORMATION OF RADIATION-INDUCED DEFECT IN SILICON, IRRADIATED BY ELECTRONS UNDER THE TEMPERATURES OF 20-K-300-K, Doklady Akademii nauk BSSR, 37(5), 1993, pp. 31-34
STIMULATED OXYGEN DIFFUSION IN HIGH-TEMPE RATURE SUPERCONDUCTOR VBA2CU3O7-BETA
Authors: KORSHUNOV FP KALANDA NA SHAMBALYEV VN PANKOV VV
Citation: Fp. Korshunov et al., STIMULATED OXYGEN DIFFUSION IN HIGH-TEMPE RATURE SUPERCONDUCTOR VBA2CU3O7-BETA, Doklady Akademii nauk BSSR, 37(2), 1993, pp. 126-129
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