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Results: 1-8 |
Results: 8
ETHICS AND DECISION-MAKING IN LOCAL SCHOOLS - INCLUSION, POLICY, AND REFORM - PAUL,JL, BERGER,NH, OSNES,PG, MARTINEZ,YG, MORSE,WC
Authors: KOWALSKI G
Citation: G. Kowalski, ETHICS AND DECISION-MAKING IN LOCAL SCHOOLS - INCLUSION, POLICY, AND REFORM - PAUL,JL, BERGER,NH, OSNES,PG, MARTINEZ,YG, MORSE,WC, Remedial and special education, 19(6), 1998, pp. 369-370
X-RAY-DIFFRACTION STUDY OF POROUS SILICON LAYERS ETCHED ON (111)-ORIENTED P(+) SUBSTRATE
Authors: KOWALSKI G GRONKOWSKI J HARASIMOWICZ T MOORE M MARICIC Z NOSSARZEWSKAORLOWSKA E BRZOZOWSKI A
Citation: G. Kowalski et al., X-RAY-DIFFRACTION STUDY OF POROUS SILICON LAYERS ETCHED ON (111)-ORIENTED P(+) SUBSTRATE, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 561-570
SYNCHROTRON X-RAY STUDIES OF STRAIN IN (100)-ORIENTED HIGH-PRESSURE HIGH-TEMPERATURE (HP-HT) SYNTHETIC DIAMONDS
Authors: KOWALSKI G MOORE M GLEDHILL G MARICIC Z
Citation: G. Kowalski et al., SYNCHROTRON X-RAY STUDIES OF STRAIN IN (100)-ORIENTED HIGH-PRESSURE HIGH-TEMPERATURE (HP-HT) SYNTHETIC DIAMONDS, DIAMOND AND RELATED MATERIALS, 5(11), 1996, pp. 1254-1263
DOUBLE-CRYSTAL DIFFRACTOMETRIC AND TOPOGRAPHIC STUDIES OF (111) ORIENTED SYNTHETIC DIAMONDS
Authors: KOWALSKI G MOORE M GLEDHILL G MARICIC Z
Citation: G. Kowalski et al., DOUBLE-CRYSTAL DIFFRACTOMETRIC AND TOPOGRAPHIC STUDIES OF (111) ORIENTED SYNTHETIC DIAMONDS, Journal of physics. D, Applied physics, 29(3), 1996, pp. 793-800
A STUDY OF DEFECTS GENERATED IN CZOCHRALSKI-GROWN SI DURING 2-STEP ANNEALING
Authors: LEFELDSOSNOWSKA M GRONKOWSKI J KOWALSKI G
Citation: M. Lefeldsosnowska et al., A STUDY OF DEFECTS GENERATED IN CZOCHRALSKI-GROWN SI DURING 2-STEP ANNEALING, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 42-46
POSITRON-ANNIHILATION SPECTROSCOPY APPLIED TO POROUS SILICON FILMS
Authors: KNIGHTS AP KOWALSKI G SALEH AS TOWNER A PATEL MI RICEEVANS PC MOORE M GLEDHILL GA NOSSARZEWSKAORLOWSKA E BRZOZOWSKI A
Citation: Ap. Knights et al., POSITRON-ANNIHILATION SPECTROSCOPY APPLIED TO POROUS SILICON FILMS, Journal of applied physics, 78(7), 1995, pp. 4411-4415
EL2-LIKE DEFECTS IN LOW-TEMPERATURE GAAS
Authors: KOWALSKI G KURPIEWSKI A KAMINSKA M WEBER ER
Citation: G. Kowalski et al., EL2-LIKE DEFECTS IN LOW-TEMPERATURE GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 27-30
X-RAY DIFFRACTOMETER AS A TOOL FOR EXAMINING LATTICE-RELAXATION PHENOMENA
Authors: LESZCZYNSKI M KOWALSKI G KAMINSKA M SUSKI T WEBER ER
Citation: M. Leszczynski et al., X-RAY DIFFRACTOMETER AS A TOOL FOR EXAMINING LATTICE-RELAXATION PHENOMENA, Semiconductor science and technology, 6(10B), 1991, pp. 66-69
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