ACNP - Italian Periodicals Catalogue

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Results: 1-15 |

Results: 15

THERMAL-PROPERTIES OF BETA-SIC EPITAXIAL LAYERS BETWEEN 150-DEGREES-CAND 500-DEGREES-C MEASURED BY USING MICROSTRUCTURES

Authors: WAGNER C KROTZ G

Citation: C. Wagner et G. Krotz, THERMAL-PROPERTIES OF BETA-SIC EPITAXIAL LAYERS BETWEEN 150-DEGREES-CAND 500-DEGREES-C MEASURED BY USING MICROSTRUCTURES, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1338-1341

RAPID PLASMA-ETCHING OF CUBIC SIC USING NF3 O-2 GAS-MIXTURES/

Authors: RICHTER C ESPERTSHUBER K WAGNER C EICKHOFF M KROTZ G

Citation: C. Richter et al., RAPID PLASMA-ETCHING OF CUBIC SIC USING NF3 O-2 GAS-MIXTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 160-163

ECOLOGICAL LIGHT MEASUREMENT IN FORESTS USING THE LIGHT DEGRADATION EFFECT IN HYDROGENATED AMORPHOUS-SILICON (A-SI-H)

Authors: AMMER C KROTZ G

Citation: C. Ammer et G. Krotz, ECOLOGICAL LIGHT MEASUREMENT IN FORESTS USING THE LIGHT DEGRADATION EFFECT IN HYDROGENATED AMORPHOUS-SILICON (A-SI-H), Annales des Sciences Forestieres, 54(6), 1997, pp. 539-551

DOPANT DEFECT INTERACTIONS IN HYDROGEN-FREE AMORPHOUS-SILICON

Authors: MULLER G HELLMICH W KROTZ G KALBITZER S GREAVES GN DERST G DENT AJ DOBSON BR

Citation: G. Muller et al., DOPANT DEFECT INTERACTIONS IN HYDROGEN-FREE AMORPHOUS-SILICON, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(2), 1996, pp. 245-259

OPTICAL-ABSORPTION AND ELECTRONIC TRANSPORT IN ION-IMPLANTATION-DOPEDPOLYCRYSTALLINE SIC FILMS

Authors: HELLMICH W MULLER G KROTZ G DERST G KALBITZER S

Citation: W. Hellmich et al., OPTICAL-ABSORPTION AND ELECTRONIC TRANSPORT IN ION-IMPLANTATION-DOPEDPOLYCRYSTALLINE SIC FILMS, Applied physics A: Materials science & processing, 61(2), 1995, pp. 193-201

FORMATION OF EPITAXIAL DIAMOND SILICON-CARBIDE HETEROJUNCTIONS

Authors: CHALKER PR JOHNSTON C ROMANI S AYRES CF BUCKLEYGOLDER IM KROTZ G ANGERER H MULLER G VEPREK S KUNSTMANN T LEGNER W SMITH LM LEESE AB JONES AC RUSHWORTH SA

Citation: Pr. Chalker et al., FORMATION OF EPITAXIAL DIAMOND SILICON-CARBIDE HETEROJUNCTIONS, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 632-636

ELECTRONIC TRANSPORT IN THERMALLY CRYSTALLIZED SIC FILMS ON SAPPHIRE

Authors: HELLMICH W MULLER G KROTZ G DERST G KALBITZER S

Citation: W. Hellmich et al., ELECTRONIC TRANSPORT IN THERMALLY CRYSTALLIZED SIC FILMS ON SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 147-150

STRUCTURAL AND ELECTRONIC CHARACTERIZATION OF BETA-SIC FILMS ON SI GROWN FROM MONO-METHYLSILANE PRECURSORS

Authors: KROTZ G LEGNER W MULLER G GRUENINGER HW SMITH L LEESE B JONES A RUSHWORTH S

Citation: G. Krotz et al., STRUCTURAL AND ELECTRONIC CHARACTERIZATION OF BETA-SIC FILMS ON SI GROWN FROM MONO-METHYLSILANE PRECURSORS, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 154-159

REVERSIBLE AND IRREVERSIBLE STRUCTURAL-CHANGES IN AMORPHOUS-SILICON

Authors: MULLER G KROTZ G KALBITZER S GREAVES GN

Citation: G. Muller et al., REVERSIBLE AND IRREVERSIBLE STRUCTURAL-CHANGES IN AMORPHOUS-SILICON, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(2), 1994, pp. 177-196

THIN-FILM SIC AS AN OPTICAL AND OPTOELECTRONIC MATERIAL

Authors: KROTZ G MULLER G DERST G WILBERTZ C KALBITZER S

Citation: G. Krotz et al., THIN-FILM SIC AS AN OPTICAL AND OPTOELECTRONIC MATERIAL, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 917-921

SIC FOR SENSORS AND HIGH-TEMPERATURE ELECTRONICS

Authors: MULLER G KROTZ G

Citation: G. Muller et G. Krotz, SIC FOR SENSORS AND HIGH-TEMPERATURE ELECTRONICS, Sensors and actuators. A, Physical, 43(1-3), 1994, pp. 259-268

CONTRIBUTION OF DEFECTS TO ELECTRONIC, STRUCTURAL, AND THERMODYNAMIC PROPERTIES OF AMORPHOUS-SILICON

Authors: STOLK PA SARIS FW BERNTSEN AJM VANDERWEG WF SEALY LT BARKLIE RC KROTZ G MULLER G

Citation: Pa. Stolk et al., CONTRIBUTION OF DEFECTS TO ELECTRONIC, STRUCTURAL, AND THERMODYNAMIC PROPERTIES OF AMORPHOUS-SILICON, Journal of applied physics, 75(11), 1994, pp. 7266-7286

DENSITY-OF-STATE DISTRIBUTION AND VARIABLE-RANGE-HOPPING TRANSPORT INAMORPHOUS-SILICON PREPARED BY ION-BOMBARDMENT

Authors: RUTTENSPERGER B MULLER G KROTZ G

Citation: B. Ruttensperger et al., DENSITY-OF-STATE DISTRIBUTION AND VARIABLE-RANGE-HOPPING TRANSPORT INAMORPHOUS-SILICON PREPARED BY ION-BOMBARDMENT, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 68(2), 1993, pp. 203-214

COLOR DETECTION USING AMORPHOUS-SEMICONDUCTOR THIN-FILM ALLOYS

Authors: WIND J KROTZ G SCHMIEDGEN R LEGNER W HECHTENBERG V MULLER G

Citation: J. Wind et al., COLOR DETECTION USING AMORPHOUS-SEMICONDUCTOR THIN-FILM ALLOYS, Sensors and actuators. A, Physical, 36(3), 1993, pp. 187-192

ION-IMPLANTATION DOPING OF POLYCRYSTALLINE SIC THIN-FILMS PREPARED BYPECVD

Authors: KROTZ G HELLMICH W MULLER G DERST G KALBITZER S

Citation: G. Krotz et al., ION-IMPLANTATION DOPING OF POLYCRYSTALLINE SIC THIN-FILMS PREPARED BYPECVD, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 927-930

Risultati: 1-15 |