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Results: 1-23 |
Results: 23
LUMINESCENCE OF ERBIUM IN AMORPHOUS HYDROGENATED SILICON OBTAINED BY THE GLOW-DISCHARGE METHOD
Authors: TERUKOV EI KONKOV OI KUDOYAROVA VK GUSEV OB WEISER G
Citation: Ei. Terukov et al., LUMINESCENCE OF ERBIUM IN AMORPHOUS HYDROGENATED SILICON OBTAINED BY THE GLOW-DISCHARGE METHOD, Semiconductors (Woodbury, N.Y.), 32(8), 1998, pp. 884-885
DEFECTS AND SHORT-RANGE AND MEDIUM-RANGE ORDER IN THE STRUCTURAL NETWORK OF HYDROGENATED AMORPHOUS-SILICON
Authors: GOLIKOVA OA KUDOYAROVA VK
Citation: Oa. Golikova et Vk. Kudoyarova, DEFECTS AND SHORT-RANGE AND MEDIUM-RANGE ORDER IN THE STRUCTURAL NETWORK OF HYDROGENATED AMORPHOUS-SILICON, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 779-781
STAEBLER-WRONSKI EFFECT AS A FUNCTION OF THE FERMI-LEVEL POSITION ANDSTRUCTURE OF NONDOPED, AMORPHOUS, HYDRATED SILICON
Authors: GOLIKOVA OA KAZANIN MM KUDOYAROVA VK
Citation: Oa. Golikova et al., STAEBLER-WRONSKI EFFECT AS A FUNCTION OF THE FERMI-LEVEL POSITION ANDSTRUCTURE OF NONDOPED, AMORPHOUS, HYDRATED SILICON, Semiconductors, 32(4), 1998, pp. 434-438
STUDY OF DIAMOND-LIKE CARBON-FILMS FOR PROTECTIVE COATINGS
Authors: KUDOYAROVA VK CHERNYSHOV AV ZVONAREVA TK DZHELEPOVA NB TSOLOV MB
Citation: Vk. Kudoyarova et al., STUDY OF DIAMOND-LIKE CARBON-FILMS FOR PROTECTIVE COATINGS, Surface & coatings technology, 101(1-3), 1998, pp. 192-195
ROOM-TEMPERATURE PHOTOLUMINESCENCE OF AMORPHOUS HYDROGENATED SILICON-CARBIDE DOPED WITH ERBIUM
Authors: TERUKOV EI KUDOYAROVA VK KUZNETSOV AN FUHS W WEISER G KUEHNE H
Citation: Ei. Terukov et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE OF AMORPHOUS HYDROGENATED SILICON-CARBIDE DOPED WITH ERBIUM, Journal of non-crystalline solids, 230, 1998, pp. 488-492
LOCAL ENVIRONMENT OF ERBIUM ATOMS IN AMORPHOUS HYDROGENATED SILICON
Authors: MASTEROV VF NASREDINOV FS SEREGIN PP KUDOYAROVA VK KUZNETSOV AN TERUKOV EI
Citation: Vf. Masterov et al., LOCAL ENVIRONMENT OF ERBIUM ATOMS IN AMORPHOUS HYDROGENATED SILICON, Applied physics letters, 72(6), 1998, pp. 728-730
CHARACTERISTIC STRUCTURAL FEATURES OF AMORPHOUS HYDRATED SILICON FILMS DEPOSITED BY DIRECT-CURRENT DECOMPOSITION OF SILANE IN A MAGNETIC-FIELD
Authors: GOLIKOVA OA KUZNETSOV AN KUDOYAROVA VK KAZANIN MM
Citation: Oa. Golikova et al., CHARACTERISTIC STRUCTURAL FEATURES OF AMORPHOUS HYDRATED SILICON FILMS DEPOSITED BY DIRECT-CURRENT DECOMPOSITION OF SILANE IN A MAGNETIC-FIELD, Semiconductors, 31(7), 1997, pp. 691-694
ON THE RELAXATIONAL CHARACTERISTICS AND STABILITY OF A SI-H FILMS GROWN AT HIGH-TEMPERATURES
Authors: KUROVA IA ORMONT NN GOLIKOVA OA KUDOYAROVA VK
Citation: Ia. Kurova et al., ON THE RELAXATIONAL CHARACTERISTICS AND STABILITY OF A SI-H FILMS GROWN AT HIGH-TEMPERATURES, Semiconductors, 31(5), 1997, pp. 452-454
EXCITATION AND TEMPERATURE QUENCHING OF ER-INDUCED LUMINESCENCE IN A-SI-H(ER)
Authors: FUHS W ULBER I WEISER G BRESLER MS GUSEV OB KUZNETSOV AN KUDOYAROVA VK TERUKOV EI YASSIEVICH IN
Citation: W. Fuhs et al., EXCITATION AND TEMPERATURE QUENCHING OF ER-INDUCED LUMINESCENCE IN A-SI-H(ER), Physical review. B, Condensed matter, 56(15), 1997, pp. 9545-9551
ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED AMORPHOUS HYDROGENATED SILICON
Authors: GUSEV OB KUZNETSOV AN TERUKOV EI BRESLER MS KUDOYAROVA VK YASSIEVICH IN ZAKHARCHENYA BP FUHS W
Citation: Ob. Gusev et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED AMORPHOUS HYDROGENATED SILICON, Applied physics letters, 70(2), 1997, pp. 240-242
PHOTOLUMINESCENCE AT 1.54 MU-M IN ERBIUM-DOPED AMORPHOUS HYDROGENATEDSILICON
Authors: TERUKOV EI KUDOYAROVA VK MEZDROGINA MM GOLUBEV VG STURM A FUHS W
Citation: Ei. Terukov et al., PHOTOLUMINESCENCE AT 1.54 MU-M IN ERBIUM-DOPED AMORPHOUS HYDROGENATEDSILICON, Semiconductors, 30(5), 1996, pp. 440-443
AMORPHOUS HYDRATED SILICON FILMS DEPOSITED AT ELEVATED-TEMPERATURES
Authors: GOLIKOVA OA KAZANIN MM KONKOV OI KUDOYAROVA VK TERUKOV EI
Citation: Oa. Golikova et al., AMORPHOUS HYDRATED SILICON FILMS DEPOSITED AT ELEVATED-TEMPERATURES, Semiconductors, 30(3), 1996, pp. 226-230
PECULIARITIES OF NEAR-RANGE AND MEDIUM-RANGE ORDER IN A-C-H FILMS EXHIBITING A PHOTOINDUCTION EFFECT
Authors: KUDOYAROVA VK AVERYANOV VL CHERNYSHOV AV ZVONAREVA TK
Citation: Vk. Kudoyarova et al., PECULIARITIES OF NEAR-RANGE AND MEDIUM-RANGE ORDER IN A-C-H FILMS EXHIBITING A PHOTOINDUCTION EFFECT, Semiconductors, 30(2), 1996, pp. 127-131
A-SI-H FILMS FABRICATED AT ELEVATED-TEMPERATURES BY DIRECT-CURRENT, MAGNETRON-ASSISTED SILANE DECOMPOSITION
Authors: GOLIKOVA OA KUZNETSOV AN KUDOYAROVA VK KAZANIN MM
Citation: Oa. Golikova et al., A-SI-H FILMS FABRICATED AT ELEVATED-TEMPERATURES BY DIRECT-CURRENT, MAGNETRON-ASSISTED SILANE DECOMPOSITION, Semiconductors, 30(10), 1996, pp. 983-985
ERBIUM ELECTROLUMINESCENCE IN AMORPHOUS H YDROGENIZED SILICON AT THE ROOM-TEMPERATURE
Authors: BRESLER MS GUSEV OB ZAKHARCHENYA BP KUDOYAROVA VK KUZNETSOV AN TERUKOV EI FUS V YASSIEVICH IN
Citation: Ms. Bresler et al., ERBIUM ELECTROLUMINESCENCE IN AMORPHOUS H YDROGENIZED SILICON AT THE ROOM-TEMPERATURE, Fizika tverdogo tela, 38(4), 1996, pp. 1189-1194
SYMMETRY OF LOCAL SURROUNDING OF ERBIUM I MPURED ATOMS IN AMORPHOUS HYDROGENIZED SILICON
Authors: MASTEROV VF NASREDINOV FS SEREGIN PP KUDOYAROVA VK KUZNETSOV AN TERUKOV EI
Citation: Vf. Masterov et al., SYMMETRY OF LOCAL SURROUNDING OF ERBIUM I MPURED ATOMS IN AMORPHOUS HYDROGENIZED SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 22(23), 1996, pp. 25-29
ELECTROPHYSICAL PROPERTIES OF A-C-H FILMS - PROMISING PROTECTIVE COATINGS FOR ELECTROPHOTOGRAPHIC INFORMATION CARRIERS
Authors: KUDOYAROVA VK AVERYANOV VL CHERNYSHEV AV TSOLOV MB
Citation: Vk. Kudoyarova et al., ELECTROPHYSICAL PROPERTIES OF A-C-H FILMS - PROMISING PROTECTIVE COATINGS FOR ELECTROPHOTOGRAPHIC INFORMATION CARRIERS, Semiconductors, 29(9), 1995, pp. 865-870
STRUCTURAL NETWORK AND FERMI-LEVEL OF PSEUDODOPED AMORPHOUS HYDROGENATED SILICON
Authors: GOLIKOVA OA KUDOYAROVA VK
Citation: Oa. Golikova et Vk. Kudoyarova, STRUCTURAL NETWORK AND FERMI-LEVEL OF PSEUDODOPED AMORPHOUS HYDROGENATED SILICON, Semiconductors, 29(6), 1995, pp. 584-587
ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON
Authors: BRESLER MS GUSEV OB KUDOYAROVA VK KUZNETSOV AN PAK PE TERUKOV EI YASSIEVICH IN ZAKHARCHENYA BP FUHS W STURN A
Citation: Ms. Bresler et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 67(24), 1995, pp. 3599-3601
OPTICAL AND ELECTRICAL-PROPERTIES OF A-SI1-XCX-H LAYERS IN CONNECTIONWITH PROMISING ELECTROPHOTOGRAPHIC APPLICATIONS
Authors: KUDOYAROVA VK TERUKOV EI TRAPEZNIKOVA IN VIOLINA GN ELKINA NV KAVALYAUSKAS RA
Citation: Vk. Kudoyarova et al., OPTICAL AND ELECTRICAL-PROPERTIES OF A-SI1-XCX-H LAYERS IN CONNECTIONWITH PROMISING ELECTROPHOTOGRAPHIC APPLICATIONS, Semiconductors, 28(8), 1994, pp. 742-747
ANALYSIS OF IR-SPECTRA OF A-SINRH ALLOYS ON THE BASIS OF THE INDUCTION MODEL
Authors: BUDAGYAN BG ALVAZOV AA STRYAKHILEV DA KUDOYAROVA VK
Citation: Bg. Budagyan et al., ANALYSIS OF IR-SPECTRA OF A-SINRH ALLOYS ON THE BASIS OF THE INDUCTION MODEL, Semiconductors, 28(5), 1994, pp. 459-466
STUDY OF PULSE LUMINESCENCE OF ALPHA-SIH UNDER THE INTENSE PICOSECONDEXCITATION
Authors: DANISHEVSKII AM LATINIS V MEZDROGINA MM KUDOYAROVA VK TERUKOV EI
Citation: Am. Danishevskii et al., STUDY OF PULSE LUMINESCENCE OF ALPHA-SIH UNDER THE INTENSE PICOSECONDEXCITATION, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 104(6), 1993, pp. 4031-4041
ELECTROLUMINESCENT NUCLEUS ON POROUS SILI CON
Authors: ZHERZDEV AV KUDOYAROVA VK MEDVEDEV AV MOROZ GK
Citation: Av. Zherzdev et al., ELECTROLUMINESCENT NUCLEUS ON POROUS SILI CON, Pis'ma v Zurnal tehniceskoj fiziki, 19(23), 1993, pp. 87-90
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