Authors: KUIJLAARS KJ KLEIJN CR VANDENAKKER HEA

Citation: Kj. Kuijlaars et al., SIMULATION OF SELECTIVE TUNGSTEN CHEMICAL-VAPOR-DEPOSITION, Solid-state electronics, 42(5), 1998, pp. 43-54

Authors: KUIJLAARS KJ KLEIJN CR VANDENAKKER HEA

Citation: Kj. Kuijlaars et al., MODELING OF SELECTIVE TUNGSTEN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 291, 1996, pp. 406-410

Authors: KLEIJN CR KUIJLAARS KJ VANDENAKKER HEA

Citation: Cr. Kleijn et al., DESIGN AND SCALE-UP OF CHEMICAL-VAPOR-DEPOSITION REACTORS FOR SEMICONDUCTOR PROCESSING, Chemical Engineering Science, 51(10), 1996, pp. 2119-2128

Authors: KUIJLAARS KJ KLEIJN CR VANDENAKKER HEA

Citation: Kj. Kuijlaars et al., MULTICOMPONENT DIFFUSION PHENOMENA IN MULTIPLE-WAFER CHEMICAL-VAPOR-DEPOSITION REACTORS, Chemical engineering journal and the biochemical engineering journal, 57(2), 1995, pp. 127-136

Authors: KUIJLAARS KJ KLEIJN CR VANDENAKKER HEA

Citation: Kj. Kuijlaars et al., A DETAILED MODEL FOR LOW-PRESSURE CVD OF TUNGSTEN, Thin solid films, 270(1-2), 1995, pp. 456-461

Authors: OOSTERLAKEN TGM LEUSINK GJ JANSSEN GCAM RADELAAR S KUIJLAARS KJ KLEIJN CR VANDENAKKER HEA

Citation: Tgm. Oosterlaken et al., INFLUENCE OF TEMPERATURE-GRADIENTS ON PARTIAL PRESSURES IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of applied physics, 76(5), 1994, pp. 3130-3139