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Authors: TAKASHIMA D KUNISHIMA I
Citation: D. Takashima et I. Kunishima, HIGH-DENSITY CHAIN FERROELECTRIC RANDOM-ACCESS MEMORY (CHAIN FRAM), IEEE journal of solid-state circuits, 33(5), 1998, pp. 787-792

Authors: SAKATA A TOMITA M KOIKE M KOYAMA M KUNISHIMA I
Citation: A. Sakata et al., ANOMALOUS JUNCTION LEAKAGE BEHAVIOR OF TI SELF-ALIGNED SILICIDE CONTACTS ON ULTRA-SHALLOW JUNCTIONS, JPN J A P 1, 36(3B), 1997, pp. 1558-1562

Authors: MORIMOTO T OHGURO T MOMOSE HS IINUMA T KUNISHIMA I SUGURO K KATAKABE I NAKAJIMA H TSUCHIAKI M ONO M KATSUMATA Y IWAI H
Citation: T. Morimoto et al., SELF-ALIGNED NICKEL-MONO-SILICIDE TECHNOLOGY FOR HIGH-SPEED DEEP-SUBMICROMETER LOGIC CMOS ULSI, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 915-922
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