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CHARACTERISTICS OF SHALLOW BORON-DOPED LAYERS IN SI BY RAPID VAPOR-PHASE DIRECT DOPING
Authors:
KIYOTA Y NAKAMURA T INADA T KURANOUCHI A HIRANO Y
Citation:
Y. Kiyota et al., CHARACTERISTICS OF SHALLOW BORON-DOPED LAYERS IN SI BY RAPID VAPOR-PHASE DIRECT DOPING, Journal of the Electrochemical Society, 140(4), 1993, pp. 1117-1121
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