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Results: 1-6 |
Results: 6

Authors: KWAN WS DEEN MJ
Citation: Ws. Kwan et Mj. Deen, HOT-CARRIER EFFECTS ON THE SCATTERING PARAMETERS OF LIGHTLY DOPED DRAIN N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 628-632

Authors: KWAN WS DEEN MJ
Citation: Ws. Kwan et Mj. Deen, HOT-CARRIER EFFECTS ON THE SCATTERING PARAMETERS OF LIGHTLY DOPED DRAIN N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 855-859

Authors: RAYCHAUDHURI A DEEN MJ KWAN WS KING MIH
Citation: A. Raychaudhuri et al., FEATURES AND MECHANISMS OF THE SATURATING HOT-CARRIER DEGRADATION IN LDD NMOSFETS, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1114-1122

Authors: RAYCHAUDHURI A DEEN MJ KING MIH KWAN WS
Citation: A. Raychaudhuri et al., A SIMPLE METHOD TO QUALIFY THE LDD STRUCTURE AGAINST THE EARLY MODE OF HOT-CARRIER DEGRADATION, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 110-115

Authors: KWAN WS RAYCHAUDHURI A DEEN MJ
Citation: Ws. Kwan et al., LOCATION AND QUANTIFICATION OF THE INTERFACE DEFECTS IN STRESSED LDD NMOSFETS USING A COMBINATION OF FLOATING-GATE AND TRANSCONDUCTANCE TECHNIQUES, AND CHARGE-PUMPING METHODS, Canadian journal of physics, 74, 1996, pp. 167-171

Authors: ZIMMERMAN SC KWAN WS
Citation: Sc. Zimmerman et Ws. Kwan, A COMPARISON OF ENTHALPIES OF FORMATION IN SOLUTION AND ENTHALPIES FOR HPLC RETENTION FOR HYDROGEN-BONDED HOST-GUEST COMPLEXES, Angewandte Chemie, International Edition in English, 34(21), 1995, pp. 2404-2406
Risultati: 1-6 |