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Citation: T. Taishi et al., Heavily boron-doped silicon single crystal growth: Constitutional supercooling, JPN J A P 2, 39(1AB), 2000, pp. L5-L8

Authors: Taishi, T Huang, XM Kubota, M Kajigaya, T Fukami, T Hoshikawa, K

Citation: T. Taishi et al., Heavily boron-doped Czochralski (CZ) silicon crystal growth: segregation and constitutional supercooling, MAT SCI E B, 72(2-3), 2000, pp. 169-172

Authors: Taishi, T Huang, XM Kubota, M Kajigaya, T Fukami, T Hoshikawa, K

Citation: T. Taishi et al., Heavily boron-doped silicon single crystal growth: Boron segregation, JPN J A P 2, 38(3A), 1999, pp. L223-L225

Authors: Hoshikawa, K Huang, XM Taishi, T Kajigaya, T Iino, T

Citation: K. Hoshikawa et al., Dislocation-free Czochralski silicon crystal growth without the dislocation-elimination-necking process, JPN J A P 2, 38(12A), 1999, pp. L1369-L1371