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Citation: Rj. Kaplar et al., Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells, SOL EN MAT, 69(1), 2001, pp. 85-91

Authors: Kaplar, RJ Arehart, AR Ringel, SA Allerman, AA Sieg, RM Kurtz, SR

Citation: Rj. Kaplar et al., Deep levels and their impact on generation current in Sn-doped InGaAsN, J APPL PHYS, 90(7), 2001, pp. 3405-3408

Authors: Kwon, D Kaplar, RJ Ringel, SA Allerman, AA Kurtz, SR Jones, ED

Citation: D. Kwon et al., Deep levels in p-type InGaAsN lattice matched to GaAs, APPL PHYS L, 74(19), 1999, pp. 2830-2832