Authors:
Sanden, M
Karlin, TE
Ma, P
Grahn, JV
Zhang, SL
Ostling, M
Citation: M. Sanden et al., The influence on electrical performance of double-polysilicon bipolar transistors by forming gas annealing, PHYS SCR, T79, 1999, pp. 243-245
Authors:
Kaplan, W
Pejnefors, J
Linder, M
Sanden, M
Karlin, TE
Malm, G
Zhang, SL
Grahn, JV
Ostling, M
Citation: W. Kaplan et al., A simplified high-speed bipolar process with Ti salicide metallization: Implementation of in situ p-doped polysilicon emitter, PHYS SCR, T79, 1999, pp. 318-321
Authors:
Sanden, M
Karlin, TE
Ma, P
Grahn, JV
Zhang, SL
Ostling, M
Citation: M. Sanden et al., The effect of hydrogen passivation on electrical characteristics of double-polysilicon self-aligned bipolar transistors, SOL ST ELEC, 43(3), 1999, pp. 615-620