Authors: Sanden, M Karlin, TE Ma, P Grahn, JV Zhang, SL Ostling, M

Citation: M. Sanden et al., The influence on electrical performance of double-polysilicon bipolar transistors by forming gas annealing, PHYS SCR, T79, 1999, pp. 243-245

Authors: Kaplan, W Pejnefors, J Linder, M Sanden, M Karlin, TE Malm, G Zhang, SL Grahn, JV Ostling, M

Citation: W. Kaplan et al., A simplified high-speed bipolar process with Ti salicide metallization: Implementation of in situ p-doped polysilicon emitter, PHYS SCR, T79, 1999, pp. 318-321

Authors: Sanden, M Karlin, TE Ma, P Grahn, JV Zhang, SL Ostling, M

Citation: M. Sanden et al., The effect of hydrogen passivation on electrical characteristics of double-polysilicon self-aligned bipolar transistors, SOL ST ELEC, 43(3), 1999, pp. 615-620