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Results:
1-2
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Results: 2
Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET's devices at low gamma rays radiation doses
Authors:
Djezzar, B Smatti, A Amrouche, A Kechouane, M
Citation:
B. Djezzar et al., Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET's devices at low gamma rays radiation doses, IEEE NUCL S, 47(6), 2000, pp. 1872-1878
Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering
Authors:
Kechouane, M Beldi, N Mouheb, O Mohammed-Brahim, T Barriere, AS L'Haridon, H Gauneau, M
Citation:
M. Kechouane et al., Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering, PHIL MAG B, 79(8), 1999, pp. 1205-1211
Risultati:
1-2
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