Authors: Khemka, V Ananthan, V Chow, TP

Citation: V. Khemka et al., A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier, IEEE ELEC D, 21(6), 2000, pp. 286-288

Authors: Chow, TP Khemka, V Fedison, J Ramungul, N Matocha, K Tang, Y Gutmann, RJ

Citation: Tp. Chow et al., SiC and GaN bipolar power devices, SOL ST ELEC, 44(2), 2000, pp. 277-301

Authors: Chatty, K Khemka, V Chow, TP Gutmann, RJ

Citation: K. Chatty et al., Re-oxidation characteristics of oxynitrides on 3C- and 4H-SiC, J ELEC MAT, 28(3), 1999, pp. 161-166

Authors: Khemka, V Patel, R Ramungul, N Chow, TP Ghezzo, M Kretchmer, J

Citation: V. Khemka et al., Characterization of phosphorus implantation in 4H-SiC, J ELEC MAT, 28(3), 1999, pp. 167-174

Authors: Khemka, V Patel, R Chow, TP Gutmann, RJ

Citation: V. Khemka et al., Design considerations and experimental analysis for silicon carbide power rectifiers, SOL ST ELEC, 43(10), 1999, pp. 1945-1962

Authors: Ramungul, N Khemka, V Zheng, YP Patel, R Chow, TP

Citation: N. Ramungul et al., 6H-SiC P+N junctions fabricated by beryllium implantation, IEEE DEVICE, 46(3), 1999, pp. 465-470