Authors: Nikishin, S Kipshidze, G Kuryatkov, V Choi, K Gherasoiu, I de Peralta, LG Zubrilov, A Tretyakov, V Copeland, K Prokofyeva, T Holtz, M Asomoza, R Kudryavtsev, Y Temkin, H

Citation: S. Nikishin et al., Gas source molecular beam epitaxy of high quality AlxGa1-xN (0 <= x <= 1) on Si(111), J VAC SCI B, 19(4), 2001, pp. 1409-1412

Authors: Kipshidze, G Nikishin, S Kuryatkov, V Choi, K Gherasoiu, I Prokofyeva, T Holtz, M Temkin, H Hobart, KD Kub, FJ Fatemi, M

Citation: G. Kipshidze et al., High quality AlN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy, J ELEC MAT, 30(7), 2001, pp. 825-828

Authors: Lebedev, V Schroter, B Kipshidze, G Richter, W

Citation: V. Lebedev et al., The polarity of AlN films grown on Si(111), J CRYST GR, 207(4), 1999, pp. 266-272