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Results:
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Results: 3
Electrical properties of rapid thermally annealed SiNx : H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy
Authors:
Martinez, FL del Prado, A Martil, I Gonzalez-Diaz, G Kliefoth, K Fussel, W
Citation:
Fl. Martinez et al., Electrical properties of rapid thermally annealed SiNx : H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy, SEMIC SCI T, 16(7), 2001, pp. 534-542
Capture cross sections of defect states at the Si/SiO2 interface
Authors:
Albohn, J Fussel, W Sinh, ND Kliefoth, K Fuhs, W
Citation:
J. Albohn et al., Capture cross sections of defect states at the Si/SiO2 interface, J APPL PHYS, 88(2), 2000, pp. 842-849
Two types of traps at the Si/SiO2 interface characterized by their cross sections
Authors:
Albohn, J Fussel, W Sinh, ND Kliefoth, K Flietner, H Fuhs, W
Citation:
J. Albohn et al., Two types of traps at the Si/SiO2 interface characterized by their cross sections, MICROEL ENG, 48(1-4), 1999, pp. 159-162
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