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Results: 1-25/26
Authors:
Erbert, G
Beister, G
Hulsewede, R
Knauer, A
Pittroff, W
Sebastian, J
Wenzel, H
Weyers, M
Trankle, G
Citation: G. Erbert et al., High-power highly reliable Al-free 940-nm diode lasers, IEEE S T QU, 7(2), 2001, pp. 143-148
Authors:
Sebastian, J
Beister, G
Bugge, F
Buhrandt, F
Erbert, G
Hansel, HG
Hulsewede, R
Knauer, A
Pittroff, W
Staske, R
Schroder, M
Wenzel, H
Weyers, M
Trankle, G
Citation: J. Sebastian et al., High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence, IEEE S T QU, 7(2), 2001, pp. 334-339
Authors:
Sumpf, B
Beister, G
Erbert, G
Fricke, J
Knauer, A
Pittroff, W
Ressel, P
Sebastian, J
Wenzel, H
Trankle, G
Citation: B. Sumpf et al., Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1,2-W continuous-wave operation at 735 nm, IEEE PHOTON, 13(1), 2001, pp. 7-9
Influence of oxygen in AlGaAs-based laser structures with Al-free active region on device properties
Authors:
Knauer, A
Wenzel, H
Erbert, G
Sumpf, B
Weyers, M
Citation: A. Knauer et al., Influence of oxygen in AlGaAs-based laser structures with Al-free active region on device properties, J ELEC MAT, 30(11), 2001, pp. 1421-1424
Authors:
Hulsewede, R
Sebastian, J
Wenzel, H
Beister, G
Knauer, A
Erbert, G
Citation: R. Hulsewede et al., Beam quality of high power 800 nm broad-area laser diodes with 1 and 2 mu m large optical cavity structures, OPT COMMUN, 192(1-2), 2001, pp. 69-75
Authors:
Hofmann, L
Rudloff, D
Rechenberg, I
Knauer, A
Christen, J
Weyers, M
Citation: L. Hofmann et al., (AlGa)As composition profile analysis of trenches overgrown with MOVPE, J CRYST GR, 222(3), 2001, pp. 465-470
Authors:
Sumpf, B
Beister, G
Erbert, G
Fricke, J
Knauer, A
Pittroff, W
Ressel, P
Sebastian, J
Wenzel, H
Trankle, G
Citation: B. Sumpf et al., 2W reliable operation of lambda=735nm GaAsP/AlGaAs laser diodes, ELECTR LETT, 37(6), 2001, pp. 351-353
Authors:
Knauer, A
Bugge, F
Erbert, G
Wenzel, H
Vogel, K
Zeimer, U
Weyers, M
Citation: A. Knauer et al., Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation, J ELEC MAT, 29(1), 2000, pp. 53-56
Authors:
Bugge, F
Knauer, A
Gramlich, S
Rechenberg, I
Beister, G
Sebastian, J
Wenzel, H
Erbert, G
Weyers, M
Citation: F. Bugge et al., MOVPE growth of AlGaAs/GaInP diode lasers, J ELEC MAT, 29(1), 2000, pp. 57-61
Authors:
Weyers, M
Bhattacharya, A
Bugge, F
Knauer, A
Citation: M. Weyers et al., Epitaxy of high-power diode laser structures, T APPL PHYS, 78, 2000, pp. 83-120
Authors:
Wenzel, H
Erbert, G
Knauer, A
Oster, A
Vogel, K
Trankle, G
Citation: H. Wenzel et al., Influence of current spreading on the transparency current density of quantum-well lasers, SEMIC SCI T, 15(6), 2000, pp. 557-560
Authors:
Hahnert, I
Knauer, A
Schneider, R
Rechenberg, I
Klein, A
Neumann, W
Citation: I. Hahnert et al., {110} and {111} ordering in MOVPE-grown (Ga,In)P on (001) GaAs substrates at low temperature, CRYST RES T, 35(6-7), 2000, pp. 831-837
Authors:
Krispin, P
Asghar, M
Knauer, A
Kostial, H
Citation: P. Krispin et al., Interface properties of isotype GaAs/(In,Ga)P/GaAs heterojunctions grown by metalorganic-vapour-phase epitaxy on GaAs, J CRYST GR, 220(3), 2000, pp. 220-225
Authors:
Hofmann, L
Knauer, A
Rechenberg, I
Zeimer, U
Weyers, M
Citation: L. Hofmann et al., Comparison of binary and ternary growth over trenches using MOVPE, J CRYST GR, 213(3-4), 2000, pp. 229-234
Authors:
Hofmann, L
Klehr, A
Knauer, A
Smirnitski, VB
Sebastian, J
Erbert, G
Citation: L. Hofmann et al., 120mW tunable DBR lasers emitting at 1060nm, ELECTR LETT, 36(1), 2000, pp. 38-39
Authors:
Erbert, G
Bugge, F
Knauer, A
Sebastian, J
Thies, A
Wenzel, H
Weyers, M
Trankle, G
Citation: G. Erbert et al., High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm, IEEE S T QU, 5(3), 1999, pp. 780-784
Authors:
Knauer, A
Wintersteiger, R
Markl, R
Sametz, W
Juan, H
Citation: A. Knauer et al., Derivatization of carboxylic acids with fluorescent reagents, J PL CHROM, 12(3), 1999, pp. 211-214
Authors:
Krispin, P
Asghar, M
Knauer, A
Citation: P. Krispin et al., Deep electronic states near the surface of (In,Ga)P layers grown by MOVPE on GaAs, PHYSICA B, 274, 1999, pp. 815-818
Authors:
Zschocke, J
Quak, E
Knauer, A
Fritz, B
Aslan, M
Hoffmann, GF
Citation: J. Zschocke et al., Large heterozygous deletion masquerading as homozygous missense mutation: A pitfall in diagnostic mutation analysis, J INH MET D, 22(6), 1999, pp. 687-692
Authors:
Hofmann, L
Knauer, A
Rechenberg, I
Weyers, M
Stolz, W
Citation: L. Hofmann et al., Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy, J CRYST GR, 206(4), 1999, pp. 255-262
Authors:
Knauer, A
Erbert, G
Wenzel, H
Bhattacharya, A
Bugge, F
Maege, J
Pittroff, W
Sebastian, J
Citation: A. Knauer et al., 7W CW power from tensile-strained GaAsyP1-y/AlGaAs (lambda = 735 nm) QW diode lasers, ELECTR LETT, 35(8), 1999, pp. 638-639
Authors:
Beister, G
Erbert, G
Knauer, A
Maege, J
Ressel, P
Sebastian, J
Staske, R
Wenzel, H
Citation: G. Beister et al., High-power and high temperature long-term stability of Al-free 950nm laserstructures on GaAs, ELECTR LETT, 35(19), 1999, pp. 1641-1643
Authors:
Hofmann, L
Klehr, A
Knauer, A
Smirnitski, VB
Stolz, W
Citation: L. Hofmann et al., DBR lasers emitting at 1060 nm with first-order grating in (InGa)P waveguide layer, ELECTR LETT, 35(11), 1999, pp. 902-903
Authors:
Hofmann, L
Knauer, A
Rechenberg, I
Weyers, M
Citation: L. Hofmann et al., Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE), J CRYST GR, 195(1-4), 1998, pp. 485-489
Authors:
Bugge, F
Knauer, A
Zeimer, U
Sebastian, J
Smirnitski, VB
Klehr, A
Erbert, G
Weyers, M
Citation: F. Bugge et al., MOVPE growth of tunable DBR laser diode emitting at 1060 nm, J CRYST GR, 195(1-4), 1998, pp. 676-680