Authors: Im, JS Kollmer, H Off, J Scholz, F Hangleiter, A

Citation: Js. Im et al., Carrier confinement in GaInNi/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field, MAT SCI E B, 59(1-3), 1999, pp. 315-318

Authors: Kollmer, H Im, JS Heppel, S Off, J Scholz, F Hangleiter, A

Citation: H. Kollmer et al., Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields, APPL PHYS L, 74(1), 1999, pp. 82-84