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Results: 1-18 |
Results: 18
The electrical properties of MIS capacitors with ALN gate dielectrics
Authors: Adam, T Kolodzey, J Swann, CP Tsao, MW Rabolt, JF
Citation: T. Adam et al., The electrical properties of MIS capacitors with ALN gate dielectrics, APPL SURF S, 175, 2001, pp. 428-435
The electrical and optical properties of thin film diamond implanted with silicon
Authors: Roe, KJ Kolodzey, J Swann, CP Tsao, MW Rabolt, JF Chen, J Brandes, GR
Citation: Kj. Roe et al., The electrical and optical properties of thin film diamond implanted with silicon, APPL SURF S, 175, 2001, pp. 468-473
The electrical characteristics of silicon carbide alloyed with germanium
Authors: Katulka, G Roe, K Kolodzey, J Eldridge, G Clarke, RC Swann, CP Wilson, RG
Citation: G. Katulka et al., The electrical characteristics of silicon carbide alloyed with germanium, APPL SURF S, 175, 2001, pp. 505-511
Silicon carbide and silicon carbide : germanium heterostructure bipolar transistors
Authors: Roe, KJ Katulka, G Kolodzey, J Saddow, SE Jacobson, D
Citation: Kj. Roe et al., Silicon carbide and silicon carbide : germanium heterostructure bipolar transistors, APPL PHYS L, 78(14), 2001, pp. 2073-2075
Influence of underlying interlevel dielectric films on extrusion formationin aluminum interconnects
Authors: Chen, F Li, BZ Sullivan, TD Gonzalez, CL Muzzy, CD Lee, HK Levy, MD Dashiell, MW Kolodzey, J
Citation: F. Chen et al., Influence of underlying interlevel dielectric films on extrusion formationin aluminum interconnects, J VAC SCI B, 18(6), 2000, pp. 2826-2834
Heterostructures of pseudomorphic Ge1-yCy and Ge1-x-ySixCy alloys grown onGe (001) substrates
Authors: Dashiell, MW Kolodzey, J Boucaud, P Yam, V Lourtioz, JM
Citation: Mw. Dashiell et al., Heterostructures of pseudomorphic Ge1-yCy and Ge1-x-ySixCy alloys grown onGe (001) substrates, J VAC SCI B, 18(3), 2000, pp. 1728-1731
Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
Authors: Dashiell, MW Troeger, RT Rommel, SL Adam, TN Berger, PR Guedj, C Kolodzey, J Seabaugh, AC
Citation: Mw. Dashiell et al., Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing, IEEE DEVICE, 47(9), 2000, pp. 1707-1714
Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon
Authors: Kolodzey, J Chowdhury, EA Adam, TN Qui, GH Rau, I Olowolafe, JO Suehle, JS Chen, Y
Citation: J. Kolodzey et al., Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon, IEEE DEVICE, 47(1), 2000, pp. 121-128
Molecular beam epitaxy growth of Ge1-yCy alloys on Si (100) with high carbon contents
Authors: Roe, KJ Dashiell, MW Kolodzey, J Boucaud, P Lourtioz, JM
Citation: Kj. Roe et al., Molecular beam epitaxy growth of Ge1-yCy alloys on Si (100) with high carbon contents, J VAC SCI B, 17(3), 1999, pp. 1301-1303
Structure and lattice dynamics of Ge1-yCy alloys using anharmonic Keating modeling
Authors: Guedj, C Kolodzey, J Hairie, A
Citation: C. Guedj et al., Structure and lattice dynamics of Ge1-yCy alloys using anharmonic Keating modeling, PHYS REV B, 60(22), 1999, pp. 15150-15153
Phonon spectra of substitutional carbon in Si1-xGex alloys
Authors: Kulik, LV Guedj, C Dashiell, MW Kolodzey, J Hairie, A
Citation: Lv. Kulik et al., Phonon spectra of substitutional carbon in Si1-xGex alloys, PHYS REV B, 59(24), 1999, pp. 15753-15759
Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots
Authors: Shao, XP Jonczyk, R Dashiell, M Hits, D Orner, BA Khan, AS Roe, K Kolodzey, J Berger, PR Kaba, M Barteau, MA Unruh, KM
Citation: Xp. Shao et al., Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots, J APPL PHYS, 85(1), 1999, pp. 578-582
Analysis of high-temperature materials for application to electric weapon technology
Authors: Katulka, GL Kolodzey, J Olowolafe, J
Citation: Gl. Katulka et al., Analysis of high-temperature materials for application to electric weapon technology, IEEE MAGNET, 35(1), 1999, pp. 356-360
Growth and thermal stability of pseudomorphic Ge1-yCy/Ge superlattices on Ge(001)
Authors: Duschl, R Schmidt, OG Winter, W Eberl, K Dashiell, MW Kolodzey, J Jin-Phillipp, NY Phillipp, F
Citation: R. Duschl et al., Growth and thermal stability of pseudomorphic Ge1-yCy/Ge superlattices on Ge(001), APPL PHYS L, 74(8), 1999, pp. 1150-1152
Substitutional Ge in 3C-SiC
Authors: Guedj, C Kolodzey, J
Citation: C. Guedj et J. Kolodzey, Substitutional Ge in 3C-SiC, APPL PHYS L, 74(5), 1999, pp. 691-693
Electrical and optical properties of Ge-implanted 4H-SiC
Authors: Katulka, G Guedj, C Kolodzey, J Wilson, RG Swann, C Tsao, MW Rabolt, J
Citation: G. Katulka et al., Electrical and optical properties of Ge-implanted 4H-SiC, APPL PHYS L, 74(4), 1999, pp. 540-542
Electrical and optical properties of Ge-implanted 4H-SiC (vol 74, pg 540, 1999)
Authors: Katulka, G Guedj, C Kolodzey, J Wilson, RG Swann, C Tsao, MW Rabolt, J
Citation: G. Katulka et al., Electrical and optical properties of Ge-implanted 4H-SiC (vol 74, pg 540, 1999), APPL PHYS L, 74(18), 1999, pp. 2723-2723
The effects of composition and doping on the response of GeC-Si photodiodes
Authors: Kolodzey, J Gauthier-Lafaye, O Sauvage, S Perrossier, JL Boucaud, P Julien, FH Lourtioz, JM Chen, F Orner, BA Roe, K Guedj, C Wilson, RG Spear, J
Citation: J. Kolodzey et al., The effects of composition and doping on the response of GeC-Si photodiodes, IEEE S T QU, 4(6), 1998, pp. 964-969
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