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Citation: Wmm. Kessels et al., Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H-2-SiH4 plasma, J APPL PHYS, 89(4), 2001, pp. 2404-2413

Authors: van Swaaij, RACMM Zeman, M Korevaar, BA Smit, C Metselaar, JW van de Sanden, MCM

Citation: Racmm. Van Swaaij et al., Challenges in amorphous silicon solar cell technology, ACT PHYS SL, 50(5), 2000, pp. 559-570

Authors: Korevaar, BA Adriaenssens, GJ Smets, AHM Kessels, WMM Song, HZ van de Sanden, MCM Schram, DC

Citation: Ba. Korevaar et al., High hole drift mobility in a-Si : H deposited at high growth rates for solar cell application, J NON-CRYST, 266, 2000, pp. 380-384