Authors: Kalinina, E Kholujanov, G Solov'ev, V Strel'chuk, A Zubrilov, A Kossov, V Yafaev, R Kovarski, AP Hallen, A Konstantinov, A Karlsson, S Adas, C Rendakova, S Dmitriev, V

Citation: E. Kalinina et al., High-dose Al-implanted 4H-SiC p(+)-n-n(+) junctions, APPL PHYS L, 77(19), 2000, pp. 3051-3053