Authors: Pons, M Meziere, J Dedulle, JM Kuan, SWT Blanquet, E Bernard, C Ferret, P Di Cioccio, L Billon, T Madar, R

Citation: M. Pons et al., Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition, J PHYS IV, 11(PR3), 2001, pp. 1079-1086