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Results: 1-12 |
Results: 12
High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base
Authors: Makimoto, T Kumakura, K Kobayashi, N
Citation: T. Makimoto et al., High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base, APPL PHYS L, 79(3), 2001, pp. 380-381
Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaNcontact layer
Authors: Kumakura, K Makimoto, T Kobayashi, N
Citation: K. Kumakura et al., Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaNcontact layer, APPL PHYS L, 79(16), 2001, pp. 2588-2590
Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field
Authors: Kumakura, K Makimoto, T Kobayashi, N
Citation: K. Kumakura et al., Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field, JPN J A P 1, 39(4B), 2000, pp. 2428-2430
Activation energy and electrical activity of Mg in Mg-doped InxGa1-xN (x <0.2)
Authors: Kumakura, K Makimoto, T Kobayashi, N
Citation: K. Kumakura et al., Activation energy and electrical activity of Mg in Mg-doped InxGa1-xN (x <0.2), JPN J A P 2, 39(4B), 2000, pp. L337-L339
Efficient hole generation above 10(19) cm(-3) in Mg-doped InGaN/GaN superlattices at room temperature
Authors: Kumakura, K Makimoto, T Kobayashi, N
Citation: K. Kumakura et al., Efficient hole generation above 10(19) cm(-3) in Mg-doped InGaN/GaN superlattices at room temperature, JPN J A P 2, 39(3AB), 2000, pp. L195-L196
High hole concentrations in Mg-doped InGaN grown by MOVPE
Authors: Kumakura, K Makimoto, T Kobayashi, N
Citation: K. Kumakura et al., High hole concentrations in Mg-doped InGaN grown by MOVPE, J CRYST GR, 221, 2000, pp. 267-270
Reduced damage of electron cyclotron resonance etching by In doping into p-GaN
Authors: Makimoto, T Kumakura, K Kobayashi, N
Citation: T. Makimoto et al., Reduced damage of electron cyclotron resonance etching by In doping into p-GaN, J CRYST GR, 221, 2000, pp. 350-355
GaAs single electron transistors fabricated by selective area metalorganicvapor phase epitaxy and their application to single electron logic circuits
Authors: Nakajima, F Kumakura, K Motohisa, J Fukui, T
Citation: F. Nakajima et al., GaAs single electron transistors fabricated by selective area metalorganicvapor phase epitaxy and their application to single electron logic circuits, JPN J A P 1, 38(1B), 1999, pp. 415-417
Increased electrical activity of Mg-acceptors in AlxGa1-xN/GaN superlattices
Authors: Kumakura, K Kobayashi, N
Citation: K. Kumakura et N. Kobayashi, Increased electrical activity of Mg-acceptors in AlxGa1-xN/GaN superlattices, JPN J A P 2, 38(9AB), 1999, pp. L1012-L1014
Enhancement of hemolytic and catecholamine releasing activities of mastoparan by the dendrimeric formation
Authors: Kurita, T Kosemura, Y Kumakura, K Kasai, H Ito, H
Citation: T. Kurita et al., Enhancement of hemolytic and catecholamine releasing activities of mastoparan by the dendrimeric formation, NIP KAG KAI, (8), 1999, pp. 545-552
Syntheses and biological activities of dendrimeric mastoparans
Authors: Kurita, T Kosemura, Y Kumakura, K Kasai, H Ito, H
Citation: T. Kurita et al., Syntheses and biological activities of dendrimeric mastoparans, CHEM LETT, (3), 1999, pp. 193-194
Quantum dots fabricated by selective area MOVPE and their application to single electron devices
Authors: Fukui, T Nakajima, F Kumakura, K Motohisa, J
Citation: T. Fukui et al., Quantum dots fabricated by selective area MOVPE and their application to single electron devices, B MATER SCI, 22(3), 1999, pp. 531-535
Risultati: 1-12 |