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Results: 2
Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures
Authors:
Kunitsyn, AE Chaldyshev, VV Vul', SP Preobrazhenskii, VV Putyato, MA Semyagin, BR
Citation:
Ae. Kunitsyn et al., Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures, SEMICONDUCT, 33(10), 1999, pp. 1080-1083
Ordered arrays of arsenic clusters coincided with InAs GaAs superlattices grown by low-temperature MBE
Authors:
Chaldyshev, VV Faleev, NN Bert, NA Musikhin, YG Kunitsyn, AE Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P
Citation:
Vv. Chaldyshev et al., Ordered arrays of arsenic clusters coincided with InAs GaAs superlattices grown by low-temperature MBE, J CRYST GR, 202, 1999, pp. 260-262
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