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Citation: S. Jursenas et al., Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN, APPL PHYS L, 78(24), 2001, pp. 3776-3778

Authors: Jursenas, S Kurilcik, G Tamulaitis, G Zukauskas, A Gaska, R Shur, MS Khan, MA Yang, JW

Citation: S. Jursenas et al., Dynamic behavior of hot-electron-hole plasma in highly excited GaN epilayers, APPL PHYS L, 76(17), 2000, pp. 2388-2390

Authors: Zukauskas, A Jursenas, S Kurilcik, G Tamulaitis, G Shur, MS Gaska, R Yang, JW Khan, MA

Citation: A. Zukauskas et al., Finite-temperature band gap renormalization in highly photoexcited GaN epilayers, PHYS ST S-B, 216(1), 1999, pp. 501-504

Authors: Jursenas, S Kurilcik, G Zukauskas, A

Citation: S. Jursenas et al., Carrier cooling in CdS crystallites under extremely high photoexcitation, PHYS SCR, T79, 1999, pp. 167-169

Authors: Jursenas, S Tamulaitis, G Kurilcik, G Zukauskas, A

Citation: S. Jursenas et al., Nonradiative capture of hot photoelectrons by multiphonon emission in highly excited polar semiconductors, PHYS SCR, T79, 1999, pp. 187-192

Authors: Jursenas, S Kurilcik, G Zukauskas, A

Citation: S. Jursenas et al., Dense electron-hole plasma cooling due to second nonequilibrium-phonon bottleneck in CdS crystallites, PHYS REV B, 58(19), 1998, pp. 12937-12943