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Results: 1-10 |
Results: 10
Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing
Authors: Wurfl, J Kurpas, P Brunner, F Mai, M Rudolph, M Weyers, M
Citation: J. Wurfl et al., Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing, MICROEL REL, 41(8), 2001, pp. 1103-1108
Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties
Authors: Ressel, P Hao, PH Park, MH Yang, ZC Wang, LC Osterle, W Kurpas, P Richter, E Kuphal, E Hartnagel, HL
Citation: P. Ressel et al., Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties, J ELEC MAT, 29(7), 2000, pp. 964-972
Effect of high-temperature annealing on GaInP/GaAs HBT structures grown byLP-MOVPE
Authors: Brunner, F Richter, E Bergunde, T Rechenberg, I Bhattacharya, A Maassdorf, A Tomm, JW Kurpas, P Achouche, M Wurfl, J Weyers, M
Citation: F. Brunner et al., Effect of high-temperature annealing on GaInP/GaAs HBT structures grown byLP-MOVPE, J ELEC MAT, 29(2), 2000, pp. 205-209
Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor
Authors: Brunner, F Bergunde, T Richter, E Kurpas, P Achouche, M Maassdorf, A Wurfl, J Weyers, M
Citation: F. Brunner et al., Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor, J CRYST GR, 221, 2000, pp. 53-58
High performance InGaP/GaAs HBTs for mobile communications
Authors: Achouche, M Spitzbart, T Kurpas, P Brunner, F Wurfl, J Trankle, G
Citation: M. Achouche et al., High performance InGaP/GaAs HBTs for mobile communications, ELECTR LETT, 36(12), 2000, pp. 1073-1075
Spectroscopic process sensors in MOVPE device production
Authors: Haberland, K Kurpas, P Pristovsek, M Zettler, JT Veyers, M Richter, W
Citation: K. Haberland et al., Spectroscopic process sensors in MOVPE device production, APPL PHYS A, 68(3), 1999, pp. 309-313
Correlation of InGaP(001) surface structure during growth and bulk ordering
Authors: Zorn, M Kurpas, P Shkrebtii, AI Junno, B Bhattacharya, A Knorr, K Weyers, M Samuelson, L Zettler, JT Richter, W
Citation: M. Zorn et al., Correlation of InGaP(001) surface structure during growth and bulk ordering, PHYS REV B, 60(11), 1999, pp. 8185-8190
Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
Authors: Zettler, JT Haberland, K Zorn, M Pristovsek, M Richter, W Kurpas, P Weyers, M
Citation: Jt. Zettler et al., Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques, J CRYST GR, 195(1-4), 1998, pp. 151-162
Growth monitoring of GaInP/GaAs heterojunction bipolar transistors by reflectance anisotropy spectroscopy
Authors: Kurpas, P Arens, M Gutsche, D Richter, E Weyers, M
Citation: P. Kurpas et al., Growth monitoring of GaInP/GaAs heterojunction bipolar transistors by reflectance anisotropy spectroscopy, J CRYST GR, 195(1-4), 1998, pp. 217-222
In situ monitoring and control of InGaP growth on GaAs in MOVPE
Authors: Zorn, M Trepk, T Kurpas, P Weyers, M Zettler, JT Richter, W
Citation: M. Zorn et al., In situ monitoring and control of InGaP growth on GaAs in MOVPE, J CRYST GR, 195(1-4), 1998, pp. 223-227
Risultati: 1-10 |