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Results: 1-8 |
Results: 8
Improved Auger electron spectroscopy sputter depth profiling of W/WNx and WSix layers on Si substrates
Authors: Goryachko, A Kruger, D Kurps, R Weidner, G Pomplun, K
Citation: A. Goryachko et al., Improved Auger electron spectroscopy sputter depth profiling of W/WNx and WSix layers on Si substrates, J VAC SCI A, 19(5), 2001, pp. 2174-2180
Nonequilibrium point defects and dopant diffusion in carbon-rich silicon -art. no. 073202
Authors: Rucker, H Heinemann, B Kurps, R
Citation: H. Rucker et al., Nonequilibrium point defects and dopant diffusion in carbon-rich silicon -art. no. 073202, PHYS REV B, 6407(7), 2001, pp. 3202
Fluorine incorporation into gate stacks of advanced silicon memory technologies: Simulation, depth distribution, and reliability
Authors: Kruger, D Dabrowski, J Gaworzewski, P Kurps, R Pomplun, K
Citation: D. Kruger et al., Fluorine incorporation into gate stacks of advanced silicon memory technologies: Simulation, depth distribution, and reliability, J APPL PHYS, 90(7), 2001, pp. 3578-3584
Arsenic doped buried plate characterization in deep trenches for a 0.25 mum complementary metal-oxide-semiconductor technology by chemical etching
Authors: Kruger, D Gaworzewski, P Kurps, R Schmidt, K Luhmann, C
Citation: D. Kruger et al., Arsenic doped buried plate characterization in deep trenches for a 0.25 mum complementary metal-oxide-semiconductor technology by chemical etching, J VAC SCI B, 18(1), 2000, pp. 477-482
Effect of sodium and oxygen doping on the conductivity of CuInS2 thin films
Authors: Scheer, R Luck, I Kanis, M Kurps, R Kruger, D
Citation: R. Scheer et al., Effect of sodium and oxygen doping on the conductivity of CuInS2 thin films, THIN SOL FI, 361, 2000, pp. 468-472
Influence of fluorine contamination on reliability of thin gate oxides
Authors: Kruger, D Gaworzewski, P Kurps, R Pomplun, K
Citation: D. Kruger et al., Influence of fluorine contamination on reliability of thin gate oxides, MICROEL REL, 40(8-10), 2000, pp. 1335-1340
Suppressed diffusion of boron and carbon in carbon-rich silicon (vol 73, pg 1682, 1998)
Authors: Rucker, H Heinemann, B Ropke, W Kurps, R Kruger, D Lippert, G Osten, HJ
Citation: H. Rucker et al., Suppressed diffusion of boron and carbon in carbon-rich silicon (vol 73, pg 1682, 1998), APPL PHYS L, 75(1), 1999, pp. 147-147
The impact of supersaturated carbon on transient enhanced diffusion
Authors: Rucker, H Heinemann, B Bolze, D Kurps, R Kruger, D Lippert, G Osten, HJ
Citation: H. Rucker et al., The impact of supersaturated carbon on transient enhanced diffusion, APPL PHYS L, 74(22), 1999, pp. 3377-3379
Risultati: 1-8 |