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Results: 1
Residual strain and threading dislocation density in InGaAs layers grown on Si substrates by metalorganic vapor-phase epitaxy
Authors:
Takano, Y Kururi, T Kuwahara, K Fuke, S
Citation:
Y. Takano et al., Residual strain and threading dislocation density in InGaAs layers grown on Si substrates by metalorganic vapor-phase epitaxy, APPL PHYS L, 78(1), 2001, pp. 93-95
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