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Results: 1-22 |
Results: 22

Authors: Kwak, JS Cho, J Chae, S Nam, OH Sone, C Park, Y
Citation: Js. Kwak et al., The role of an overlayer in the formation of Ni-based transparent ohmic contacts to p-GaN, JPN J A P 1, 40(11), 2001, pp. 6221-6225

Authors: Kwak, JS Ha, MK
Citation: Js. Kwak et Mk. Ha, Force modeling and machining characteristics of the intermittent grinding wheels, KSME INT J, 15(3), 2001, pp. 351-356

Authors: Kwak, JS Song, JB
Citation: Js. Kwak et Jb. Song, Trouble diagnosis of the grinding process by using acoustic emission signals, INT J MACH, 41(6), 2001, pp. 899-913

Authors: Kim, JK Cho, YH Kwak, JS Nam, OH Lee, J Park, Y Kim, T Kim, JW Lee, JL
Citation: Jk. Kim et al., The effects of Au overlayer on the thermal stability of Pt ohmic contact on p-type GaN, J KOR PHYS, 39(1), 2001, pp. 23-27

Authors: Kim, JK Kim, KJ Kim, B Kim, JN Kwak, JS Park, YJ Lee, JL
Citation: Jk. Kim et al., Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN, J ELEC MAT, 30(3), 2001, pp. 129-133

Authors: Kim, JK Kim, CC Cho, TS Je, JH Kwak, JS Park, YJ Lee, JL
Citation: Jk. Kim et al., Effects of surface treatments on the electrical and the microstructural changes of Pd contact an p-type GaN, J ELEC MAT, 30(3), 2001, pp. 170-174

Authors: Kim, M Jeon, JG Kwak, JS Lee, MH Ahn, C
Citation: M. Kim et al., Moving object segmentation in video sequences by user interaction and automatic object tracking, IMAGE VIS C, 19(5), 2001, pp. 245-260

Authors: Kwak, JS Lee, KY Han, JY Cho, J Chae, S Nam, OH Park, Y
Citation: Js. Kwak et al., Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate, APPL PHYS L, 79(20), 2001, pp. 3254-3256

Authors: Sok, J Park, SJ Lee, EH Hong, JP Kwak, JS Kim, CO
Citation: J. Sok et al., Characterization of ferroelectric BaSrTiO3 thin films using a flip-chip technique at microwave frequency ranges, JPN J A P 1, 39(5A), 2000, pp. 2752-2755

Authors: Kwak, JS Song, JB
Citation: Js. Kwak et Jb. Song, Fault detection of the cylindrical plunge grinding process by using the parameters of AE signals, KSME INT J, 14(7), 2000, pp. 773-781

Authors: Kim, GB Kwak, JS Baik, HK Lee, SM
Citation: Gb. Kim et al., Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source, J VAC SCI B, 18(5), 2000, pp. 2576-2578

Authors: Kwak, JS Mohney, SE Lin, JY Kern, RS
Citation: Js. Kwak et al., Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphologyand thermal stability, SEMIC SCI T, 15(7), 2000, pp. 756-760

Authors: Nam, JY Seo, JS Kwak, JS Lee, MH Ha, YH
Citation: Jy. Nam et al., New fast-search algorithm for block matching motion estimation using temporal and spatial correlation of motion vector, IEEE CONS E, 46(4), 2000, pp. 934-942

Authors: Hong, JP Kwak, JS Kim, CO Park, SJ Sok, JH Lee, EH
Citation: Jp. Hong et al., Dielectric properties of pulsed-laser deposited SrTiO3 films at microwave frequency ranges, J APPL PHYS, 88(6), 2000, pp. 3592-3595

Authors: Kim, GB Kwak, JS Baik, HK Lee, SM Oh, SH Park, CG
Citation: Gb. Kim et al., Reaction of Co and capping layers and its effect on CoSi2 formation in Si/SiOx/Co system, APPL PHYS L, 77(10), 2000, pp. 1443-1445

Authors: Kim, GB Kwak, JS Baik, HK Lee, SM
Citation: Gb. Kim et al., Ex situ formation of oxide-interlayer-mediated-epitaxial CoSi2 film using Ti capping, J VAC SCI B, 17(1), 1999, pp. 162-165

Authors: Kim, JH Lee, SM Kwak, JS Baik, HK Ryu, HJ Je, JH
Citation: Jh. Kim et al., The effectiveness of a thin refractory metal layer inserted into a Ta filmby ion-assisted deposition as a diffusion barrier between copper and silicon, J KOR PHYS, 35, 1999, pp. S349-S352

Authors: Kim, DW Park, HS Kwak, JS Baik, HK Lee, SM
Citation: Dw. Kim et al., The ohmic contact formation mechanism of Au/Pt/Pd ohmic contact to p-ZnTe, J ELEC MAT, 28(8), 1999, pp. 939-943

Authors: Kim, J Yoon, DS Kwak, JS Baik, HK Lee, SM
Citation: J. Kim et al., Study on Ta diffusion barrier in Al/Si system, J ELEC MAT, 28(1), 1999, pp. 6-12

Authors: Kwak, JS Baik, HK Kim, JH Lee, SM Ryu, HJ Je, JH
Citation: Js. Kwak et al., Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization, J APPL PHYS, 85(9), 1999, pp. 6898-6903

Authors: Kim, J Kwak, JS Yoon, DS Baik, HK Lee, SM
Citation: J. Kim et al., Effects of CeO2 incorporation on the performance of a Ta diffusion barrierfor Al metallization, J APPL PHYS, 85(4), 1999, pp. 2170-2174

Authors: Kim, GB Kwak, JS Baik, HK Lee, SM
Citation: Gb. Kim et al., Effect of Ti-capping thickness on the formation of an oxide-interlayer-mediated-epitaxial CoSi2 film by ex situ annealing, J APPL PHYS, 85(3), 1999, pp. 1503-1507
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