Authors: DAVID L KOVACS B MOJZES I PECZ B LABAR J DOBOS L

Citation: L. David et al., ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF NI GE/N-GAAS INTERFACE/, Vacuum, 50(3-4), 1998, pp. 395-398

Authors: DAVID L KOVACS B MOJZES I PECZ B LABAR J

Citation: L. David et al., ELECTRICAL AND MICROSTRUCTURE ANALYSIS OF NI GE/N-GAAS INTERFACE/, Thin solid films, 323(1-2), 1998, pp. 212-216

Authors: TOROK SB LABAR J SCHMELING M VANGRIEKEN RE

Citation: Sb. Torok et al., X-RAY SPECTROMETRY, Analytical chemistry, 70(12), 1998, pp. 495-517

Authors: RADI Z BARNA PB LABAR J

Citation: Z. Radi et al., KIRKENDALL VOIDS AND THE FORMATION OF AMORPHOUS PHASE IN THE AL-PT THIN-FILM SYSTEM PREPARED BY HIGH-TEMPERATURE SUCCESSIVE DEPOSITION, Journal of applied physics, 79(8), 1996, pp. 4096-4100

Authors: TOROK SB LABAR J INJUK J VANGRIEKEN RE

Citation: Sb. Torok et al., X-RAY SPECTROMETRY, Analytical chemistry, 68(12), 1996, pp. 467-485