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Results: 1-25 |
Results: 25
MBE GROWTH AND CHARACTERIZATION OF MAGNESIUM-DOPED GALLIUM NITRIDE
Authors: DEWSNIP DJ ORTON JW LACKLISON DE FLANNERY L ANDRIANOV AV HARRISON I HOOPER SE CHENG TS FOXON CT NOVIKOV SN BER BY KUDRIAVTSEV YA
Citation: Dj. Dewsnip et al., MBE GROWTH AND CHARACTERIZATION OF MAGNESIUM-DOPED GALLIUM NITRIDE, Semiconductor science and technology, 13(8), 1998, pp. 927-935
PHOTOLUMINESCENCE OF MBE GROWN WURTZITE BE-DOPED GAN
Authors: DEWSNIP DJ ANDRIANOV AV HARRISON I ORTON JW LACKLISON DE REN GB HOOPER SE CHENG TS FOXON CT
Citation: Dj. Dewsnip et al., PHOTOLUMINESCENCE OF MBE GROWN WURTZITE BE-DOPED GAN, Semiconductor science and technology, 13(5), 1998, pp. 500-504
SECONDARY-ION MASS-SPECTROSCOPY INVESTIGATIONS OF MAGNESIUM AND CARBON-DOPED GALLIUM NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: BER BY KUDRIAVTSEV YA MERKULOV AV NOVIKOV SV LACKLISON DE ORTON JW CHENG TS FOXON CT
Citation: By. Ber et al., SECONDARY-ION MASS-SPECTROSCOPY INVESTIGATIONS OF MAGNESIUM AND CARBON-DOPED GALLIUM NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 13(1), 1998, pp. 71-74
FABRICATION AND CHARACTERIZATION OF P-TYPE GAN METAL-SEMICONDUCTOR-METAL ULTRAVIOLET PHOTOCONDUCTORS GROWN BY MBE
Authors: FLANNERY LB HARRISON I LACKLISON DE DYKEMAN RI CHENG TS FOXON CT
Citation: Lb. Flannery et al., FABRICATION AND CHARACTERIZATION OF P-TYPE GAN METAL-SEMICONDUCTOR-METAL ULTRAVIOLET PHOTOCONDUCTORS GROWN BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 307-310
DONOR-ACCEPTOR PAIR IN MOLECULAR-BEAM EPITAXY-GROWN GAN
Authors: REN GB DEWSNIP DJ LACKLISON DE ORTON JW CHENG TS FOXON CT
Citation: Gb. Ren et al., DONOR-ACCEPTOR PAIR IN MOLECULAR-BEAM EPITAXY-GROWN GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 242-245
OBSERVATION OF RESONANT RAMAN LINES DURING THE PHOTOLUMINESCENCE OF DOPED GAN
Authors: DEWSNIP DJ ANDRIANOV AV HARRISON I LACKLISON DE ORTON JW MORGAN J REN GB CHENG TS HOOPER SE FOXON CT
Citation: Dj. Dewsnip et al., OBSERVATION OF RESONANT RAMAN LINES DURING THE PHOTOLUMINESCENCE OF DOPED GAN, Semiconductor science and technology, 12(1), 1997, pp. 55-58
PHOTOLUMINESCENCE FROM GAN FILMS GROWN BY MBE ON LIGAO2 SUBSTRATE
Authors: ANDRIANOV AV LACKLISON DE ORTON JW CHENG TS FOXON CT ODONNELL KP NICHOLLS JFH
Citation: Av. Andrianov et al., PHOTOLUMINESCENCE FROM GAN FILMS GROWN BY MBE ON LIGAO2 SUBSTRATE, Semiconductor science and technology, 12(1), 1997, pp. 59-63
PHOTOLUMINESCENCE STUDY OF SILICON-DOPED GAN GROWN BY MBE ON GAAS SUBSTRATES
Authors: ORTON JW LACKLISON DE ANDRIANOV AV CHENG TS DEWSNIP DJ FOXON CT JENKINS LC HOOPER SE
Citation: Jw. Orton et al., PHOTOLUMINESCENCE STUDY OF SILICON-DOPED GAN GROWN BY MBE ON GAAS SUBSTRATES, Solid-state electronics, 41(2), 1997, pp. 219-222
MOLECULAR-BEAM EPITAXY GROWTH-KINETICS FOR GROUP-III NITRIDES
Authors: FOXON CT CHENG TS HOOPER SE JENKINS LC ORTON JW LACKLISON DE NOVIKOV SV POPOVA TB TRETYAKOV VV
Citation: Ct. Foxon et al., MOLECULAR-BEAM EPITAXY GROWTH-KINETICS FOR GROUP-III NITRIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2346-2348
IMPLANTATION OF AS IN GAN EPITAXIAL LAYERS DURING MOLECULAR-BEAM EPITAXY
Authors: BER BY MERKULOV AV NOVIKOV SV TRETYAKOV VV CHENG TS FOXON CT JENKINS LC HOOPER SE LACKLISON DE ORTON JW
Citation: By. Ber et al., IMPLANTATION OF AS IN GAN EPITAXIAL LAYERS DURING MOLECULAR-BEAM EPITAXY, Semiconductors, 30(3), 1996, pp. 293-296
SECONDARY-ION MASS-SPECTROSCOPY (SIMS) INVESTIGATIONS OF BE AND SI INCORPORATION IN GAN GROWN BY MOLECULAR-BEAM EPITAXY (MBE)
Authors: CHENG TS FOXON CT JENKINS LC HOOPER SE LACKLISON DE ORTON JW BER BY MERKULOV AV NOVIKOV SV
Citation: Ts. Cheng et al., SECONDARY-ION MASS-SPECTROSCOPY (SIMS) INVESTIGATIONS OF BE AND SI INCORPORATION IN GAN GROWN BY MOLECULAR-BEAM EPITAXY (MBE), Semiconductor science and technology, 11(4), 1996, pp. 538-541
LOW-TEMPERATURE LUMINESCENCE STUDY OF GAN FILMS GROWN BY MBE
Authors: ANDRIANOV AV LACKLISON DE ORTON JW DEWSNIP DJ HOOPER SE FOXON CT
Citation: Av. Andrianov et al., LOW-TEMPERATURE LUMINESCENCE STUDY OF GAN FILMS GROWN BY MBE, Semiconductor science and technology, 11(3), 1996, pp. 366-371
OPTICAL-PROPERTIES OF DOPED GAN GROWN BY A MODIFIED MOLECULAR-BEAM EPITAXIAL (MBE) PROCESS ON GAAS SUBSTRATES
Authors: CHENG TS HOOPER SE JENKINS LC FOXON CT LACKLISON DE DEWSNIP JD ORTON JW
Citation: Ts. Cheng et al., OPTICAL-PROPERTIES OF DOPED GAN GROWN BY A MODIFIED MOLECULAR-BEAM EPITAXIAL (MBE) PROCESS ON GAAS SUBSTRATES, Journal of crystal growth, 166(1-4), 1996, pp. 597-600
REDUCED-THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASER
Authors: MATIN MA BENSON TM ORTON JW LACKLISON DE JEZIERSKI AF FOXON CT ROBERTS JS SALE TE
Citation: Ma. Matin et al., REDUCED-THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASER, Microwave and optical technology letters, 9(1), 1995, pp. 10-12
THE GROWTH AND PROPERTIES OF MIXED GROUP-V NITRIDES
Authors: ORTON JW LACKLISON DE BABAALI N FOXON CT CHENG TS NOVIKOV SV JOHNSTON DFC HOOPER SE JENKINS LC CHALLIS LJ TANSLEY TL
Citation: Jw. Orton et al., THE GROWTH AND PROPERTIES OF MIXED GROUP-V NITRIDES, Journal of electronic materials, 24(4), 1995, pp. 263-268
SOME ASPECTS OF GAN GROWTH ON GAAS(100) SUBSTRATES USING MOLECULAR-BEAM EPITAXY WITH AN RF ACTIVATED NITROGEN-PLASMA SOURCE
Authors: HOOPER SE FOXON CT CHENG TS JENKINS LC LACKLISON DE ORTON JW BESTWICK T KEAN A DAWSON M DUGGAN G
Citation: Se. Hooper et al., SOME ASPECTS OF GAN GROWTH ON GAAS(100) SUBSTRATES USING MOLECULAR-BEAM EPITAXY WITH AN RF ACTIVATED NITROGEN-PLASMA SOURCE, Journal of crystal growth, 155(3-4), 1995, pp. 157-163
THE GROWTH AND PROPERTIES OF GROUP-III NITRIDES
Authors: FOXON CT CHENG TS NOVIKOV SV LACKLISON DE JENKINS LC JOHNSTON D ORTON JW HOOPER SE BABAALI N TANSLEY TL TRETYAKOV VV
Citation: Ct. Foxon et al., THE GROWTH AND PROPERTIES OF GROUP-III NITRIDES, Journal of crystal growth, 150(1-4), 1995, pp. 892-896
AUGER INVESTIGATION OF GROUP-III NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: NOVIKOV SV FOXON CT CHENG TS TANSLEY TL ORTON JW LACKLISON DE JOHNSTON D BABAALI N HOOPER SE JENKINS LC EAVES L
Citation: Sv. Novikov et al., AUGER INVESTIGATION OF GROUP-III NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 146(1-4), 1995, pp. 340-343
BAND-GAP OF GAN FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS AND GAPSUBSTRATES
Authors: LACKLISON DE ORTON JW HARRISON I CHENG TS JENKINS LC FOXON CT HOOPER SE
Citation: De. Lacklison et al., BAND-GAP OF GAN FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS AND GAPSUBSTRATES, Journal of applied physics, 78(3), 1995, pp. 1838-1842
SELECTIVE GROWTH OF ZINCBLENDE, WURTZITE, OR A MIXED-PHASE OF GALLIUMNITRIDE BY MOLECULAR-BEAM EPITAXY
Authors: CHENG TS JENKINS LC HOOPER SE FOXON CT ORTON JW LACKLISON DE
Citation: Ts. Cheng et al., SELECTIVE GROWTH OF ZINCBLENDE, WURTZITE, OR A MIXED-PHASE OF GALLIUMNITRIDE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 66(12), 1995, pp. 1509-1511
EXTERNAL PHOTOLUMINESCENCE EFFICIENCY AND MINORITY-CARRIER LIFETIME OF (AL,GA)AS GAAS MULTI-QUANTUM-WELL SAMPLES GROWN BY MOLECULAR-BEAM EPITAXY USING BOTH AS2 AND AS4/
Authors: FOXON CT CHENG TS DAWSON P LACKLISON DE ORTON JW VANDERVLEUTEN W HUGHES OH HENINI M
Citation: Ct. Foxon et al., EXTERNAL PHOTOLUMINESCENCE EFFICIENCY AND MINORITY-CARRIER LIFETIME OF (AL,GA)AS GAAS MULTI-QUANTUM-WELL SAMPLES GROWN BY MOLECULAR-BEAM EPITAXY USING BOTH AS2 AND AS4/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1026-1028
RECOMBINATION LIFETIME MEASUREMENTS IN ALGAAS GAAS QUANTUM-WELL STRUCTURES/
Authors: ORTON JW DAWSON P LACKLISON DE CHENG TS FOXON CT
Citation: Jw. Orton et al., RECOMBINATION LIFETIME MEASUREMENTS IN ALGAAS GAAS QUANTUM-WELL STRUCTURES/, Semiconductor science and technology, 9(9), 1994, pp. 1616-1622
OPTICALLY TRANSPARENT INDIUM-TIN-OXIDE (ITO) OHMIC CONTACTS IN THE FABRICATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS (VOL 30, PG 318, 1994)
Authors: MATIN MA JEZIERSKI AF BASHAR SA LACKLISON DE BENSON TM CHENG TS ROBERTS JS SALE TE ORTON JW FOXON CT REZAZADEH AA
Citation: Ma. Matin et al., OPTICALLY TRANSPARENT INDIUM-TIN-OXIDE (ITO) OHMIC CONTACTS IN THE FABRICATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS (VOL 30, PG 318, 1994), Electronics Letters, 30(6), 1994, pp. 532-532
OPTICALLY TRANSPARENT INDIUM-TIN-OXIDE (ITO) OHMIC CONTACTS IN THE FABRICATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: MATIN MA JEZIERSKI AF BASHAR SA LACKLISON DE BENSON TM CHENG TS ROBERTS JS SALE TE ORTON JW FOXON CT REZAZADEH AA
Citation: Ma. Matin et al., OPTICALLY TRANSPARENT INDIUM-TIN-OXIDE (ITO) OHMIC CONTACTS IN THE FABRICATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS, Electronics Letters, 30(4), 1994, pp. 318-320
SUBSTRATE-TEMPERATURE DEPENDENCE OF THE MINORITY-CARRIER LIFETIME IN (ALGA)AS GAAS MQWS GROWN WITH AS-2 AND AS-4/
Authors: CHENG TS DAWSON P LACKLISON DE FOXON CT ORTON JW HUGHES OH HENINI M
Citation: Ts. Cheng et al., SUBSTRATE-TEMPERATURE DEPENDENCE OF THE MINORITY-CARRIER LIFETIME IN (ALGA)AS GAAS MQWS GROWN WITH AS-2 AND AS-4/, Journal of crystal growth, 127(1-4), 1993, pp. 841-844
Risultati: 1-25 |