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Authors: SVENSSON BG JAGADISH C HALLEN A LALITA J

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Authors: LALITA J KESKITALO N HALLEN A JAGADISH C SVENSSON BG

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Authors: SVENSSON BG JAGADISH C HALLEN A LALITA J

Citation: Bg. Svensson et al., POINT-DEFECTS IN MEV ION-IMPLANTED SILICON STUDIED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 183-190

Authors: LALITA J JAGADISH C SVENSSON BG

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