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Results: 1-9 |
Results: 9
MECHANICAL LITHOGRAPHY USING A SINGLE-POINT DIAMOND MACHINING
Authors: GOSS SH GRAZULIS L TOMICH DH EYINK KG WALCK SD HAAS TW THOMAS DR LAMPERT WV
Citation: Sh. Goss et al., MECHANICAL LITHOGRAPHY USING A SINGLE-POINT DIAMOND MACHINING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1439-1445
ATOMIC-FORCE MICROSCOPY CORRELATED WITH SPECTROSCOPIC ELLIPSOMETRY DURING HOMEPITAXIAL GROWTH ON GAAS(111)B SUBSTRATES
Authors: TOMICH DH EYINK KG SEAFORD ML TAFERNER WF TU CW LAMPERT WV
Citation: Dh. Tomich et al., ATOMIC-FORCE MICROSCOPY CORRELATED WITH SPECTROSCOPIC ELLIPSOMETRY DURING HOMEPITAXIAL GROWTH ON GAAS(111)B SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1479-1483
CHARACTERIZATION OF LOW-TEMPERATURE-GROWN ALSB AND GASB BUFFER LAYERS
Authors: EYINK KG SEAFORD ML HAAS TW TOMICH DH LAMPERT WV WALCK SD SOLOMON JS MITCHEL WC EASTMAN LF
Citation: Kg. Eyink et al., CHARACTERIZATION OF LOW-TEMPERATURE-GROWN ALSB AND GASB BUFFER LAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1187-1190
INTERFACIAL REACTIONS IN THE FORMATION OF OHMIC CONTACTS TO WIDE BANDGAP SEMICONDUCTORS
Authors: HOLLOWAY PH KIM TJ TREXLER JT MILLER S FIJOL JJ LAMPERT WV HAAS TW
Citation: Ph. Holloway et al., INTERFACIAL REACTIONS IN THE FORMATION OF OHMIC CONTACTS TO WIDE BANDGAP SEMICONDUCTORS, Applied surface science, 117, 1997, pp. 362-372
USE OF OPTICAL-FIBER PYROMETRY IN MOLECULAR-BEAM EPITAXY
Authors: EYINK KG PATTERSON JK ADAMS SJ HAAS TW LAMPERT WV
Citation: Kg. Eyink et al., USE OF OPTICAL-FIBER PYROMETRY IN MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 262-266
HIGH-RATE AND SELECTIVE ETCHING OF GAN, ALGAN, AND ALN USING AN INDUCTIVELY-COUPLED PLASMA
Authors: SMITH SA WOLDEN CA BREMSER MD HANSER AD DAVIS RF LAMPERT WV
Citation: Sa. Smith et al., HIGH-RATE AND SELECTIVE ETCHING OF GAN, ALGAN, AND ALN USING AN INDUCTIVELY-COUPLED PLASMA, Applied physics letters, 71(25), 1997, pp. 3631-3633
METALLURGY OF AL-NI-GE OHMIC CONTACT FORMATION ON N-GAAS
Authors: LIN XW LAMPERT WV HAAS TW HOLLOWAY PH LILIENTALWEBER Z SWIDER W WASHBURN J
Citation: Xw. Lin et al., METALLURGY OF AL-NI-GE OHMIC CONTACT FORMATION ON N-GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2081-2091
SULFUR PASSIVATION OF ALXGA1-XAS FOR OHMIC CONTACT FORMATION
Authors: FISCHER V RISTOLAINEN E HOLLOWAY PH LAMPERT WV HAAS TW
Citation: V. Fischer et al., SULFUR PASSIVATION OF ALXGA1-XAS FOR OHMIC CONTACT FORMATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1103-1107
MORPHOLOGY OF AL-NI-GE OHMIC CONTACTS TO N-GAAS AS A FUNCTION OF CONTACT COMPOSITION
Authors: LIN XW LAMPERT WV SWIDER W HAAS TW HOLLOWAY PH WASHBURN J LILIENTALWEBER Z
Citation: Xw. Lin et al., MORPHOLOGY OF AL-NI-GE OHMIC CONTACTS TO N-GAAS AS A FUNCTION OF CONTACT COMPOSITION, Thin solid films, 253(1-2), 1994, pp. 490-495
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