Authors: KASAP M LANCEFIELD D

Citation: M. Kasap et D. Lancefield, THE TEMPERATURE AND PRESSURE-DEPENDENCE OF ELECTRON-TRANSPORT IN PLASTICALLY RELAXED INXGA1-XAS, Physica status solidi. b, Basic research, 199(2), 1997, pp. 481-493

Authors: HALL DJ HOSEA TJC LANCEFIELD D

Citation: Dj. Hall et al., AIRY FUNCTION-ANALYSIS OF FRANZ-KELDYSH OSCILLATIONS IN THE PHOTOREFLECTANCE SPECTRA OF IN1-XGAXASYP1-Y LAYERS, Journal of applied physics, 82(6), 1997, pp. 3092-3099

Authors: HOSEA TJC LANCEFIELD D GARAWAL NS

Citation: Tjc. Hosea et al., DETAILED ANALYSIS OF ROOM-TEMPERATURE PHOTOREFLECTANCE OF STRAINED INXGA1-XAS ALYGA1-YAS UNDOPED SINGLE QUANTUM-WELLS/, Journal of applied physics, 79(8), 1996, pp. 4338-4347

Authors: LANCEFIELD D ADAMS AR MENEY AT KNAP W LITWINSTASZEWSKA E SKIERBISZEWSKI C ROBERT JL

Citation: D. Lancefield et al., THE LIGHT-HOLE MASS IN A STRAINED INGAAS GAAS SINGLE-QUANTUM-WELL ANDITS PRESSURE-DEPENDENCE/, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 469-473

Authors: BILLEN K KELLY MJ LANCEFIELD D GWILLIAM RM RTICHIE DA GYMER S JONES GAC LINFIELD EH CHURCHILL AP

Citation: K. Billen et al., PROTON ISOLATION OF SI DELTA-DOPED GAAS, Electronics Letters, 30(16), 1994, pp. 1359-1360

Authors: GLEW RW ADAMS AR CROOKES CG GREENE PD HOLMES SN KITCHING SA KLIPSTEIN PC LANCEFIELD D STRADLING RA WOOLLEY RA

Citation: Rw. Glew et al., HIGH-PURITY INP AND THE ROLE OF HYDROGEN, Semiconductor science and technology, 6(11), 1991, pp. 1088-1092