Authors:
SIEG RM
CARLIN JA
BOECKL JJ
RINGEL SA
CURRIE MT
TING SM
LANGDO TA
TARASCHI G
FITZGERALD EA
KEYES BM
Citation: Rm. Sieg et al., HIGH MINORITY-CARRIER LIFETIMES IN GAAS GROWN ON LOW-DEFECT-DENSITY GE GESI/SI SUBSTRATES/, Applied physics letters, 73(21), 1998, pp. 3111-3113
Authors:
SAMAVEDAM SB
CURRIE MT
LANGDO TA
FITZGERALD EA
Citation: Sb. Samavedam et al., HIGH-QUALITY GERMANIUM PHOTODIODES INTEGRATED ON SILICON SUBSTRATES USING OPTIMIZED RELAXED GRADED BUFFERS, Applied physics letters, 73(15), 1998, pp. 2125-2127
Authors:
CURRIE MT
SAMAVEDAM SB
LANGDO TA
LEITZ CW
FITZGERALD EA
Citation: Mt. Currie et al., CONTROLLING THREADING DISLOCATION DENSITIES IN GE ON SI USING GRADED SIGE LAYERS AND CHEMICAL-MECHANICAL POLISHING, Applied physics letters, 72(14), 1998, pp. 1718-1720