Citation: Jm. Shannon et al., PROGRAMMABLE DEVICES BASED ON CURRENT-INDUCED CONDUCTIVITY IN AMORPHOUS-SILICON ALLOYS, Solid-state electronics, 42(1), 1998, pp. 91-99
Citation: Sp. Lau et al., CHANGES IN THE POOLE-FRENKEL COEFFICIENT WITH CURRENT-INDUCED DEFECT BAND CONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON NITRIDE, Journal of non-crystalline solids, 230, 1998, pp. 533-537
Citation: Sp. Lau et al., OPTOELECTRONIC PROPERTIES OF HIGHLY CONDUCTIVE MICROCRYSTALLINE SIC PRODUCED BY LASER CRYSTALLIZATION OF AMORPHOUS SIC, Journal of non-crystalline solids, 200, 1996, pp. 907-910
Authors:
SALIH AJ
LAU SP
MARSHALL JM
MAUD JM
BOWEN WR
HILAL N
LOVITT RW
WILLIAMS PM
Citation: Aj. Salih et al., IMPROVED THIN-FILMS OF PENTACENE VIA PULSED-LASER DEPOSITION AT ELEVATED SUBSTRATE TEMPERATURES, Applied physics letters, 69(15), 1996, pp. 2231-2233
Citation: Sp. Lau et al., STRUCTURAL AND ELECTRICAL-TRANSPORT PROPERTIES OF EXCIMER (ARF)-LASER-CRYSTALLIZED SILICON-CARBIDE, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 72(3), 1995, pp. 323-333
Citation: Kp. Dabke et al., EXPERT-SYSTEM FOR THE DESIGN OF OPTICAL-FIBER COMMUNICATIONS LINKS, Engineering applications of artificial intelligence, 8(3), 1995, pp. 319-331
Authors:
LAU SP
MARSHALL JM
DYER TE
HEPBURN AR
DAVIES JF
Citation: Sp. Lau et al., A-SIC-H THIN-FILM VISIBLE LIGHT-EMITTING-DIODES WITH HIGHLY CONDUCTIVE WIDE-BAND GAP A-SIC-H AS THE CARRIER INJECTION LAYERS, Journal of non-crystalline solids, 166, 1993, pp. 813-816