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Results:
1-7
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Results: 7
Authors:
TOURNIE E
ONGARETTO C
LAUGT M
FAURIE JP
Citation: E. Tournie et al., CRITICAL THICKNESS OF ZN1-XCDXSE ZNSE HETEROSTRUCTURES GROWN ON RELAXED ZNSE BUFFER LAYERS ON BARE GAAS SUBSTRATES/, Applied physics letters, 72(2), 1998, pp. 217-219
Authors:
GRANDJEAN N
MASSIES J
MARTINEZ Y
VENNEGUES P
LEROUX M
LAUGT M
Citation: N. Grandjean et al., GAN EPITAXIAL-GROWTH ON SAPPHIRE(0001) - THE ROLE OF THE SUBSTRATE NITRIDATION, Journal of crystal growth, 178(3), 1997, pp. 220-228
Authors:
BOUSQUET V
ONGARETTO C
LAUGT M
BEHRINGER M
TOURNIE E
FAURIE JP
Citation: V. Bousquet et al., (001)GAAS SUBSTRATE PREPARATION FOR DIRECT ZNSE HETEROEPITAXY, Journal of applied physics, 81(10), 1997, pp. 7012-7017
Authors:
GRANDJEAN N
LEROUX M
LAUGT M
MASSIES J
Citation: N. Grandjean et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF WURTZITE GAN ON SAPPHIRE SUBSTRATES USING GAN BUFFER LAYERS, Applied physics letters, 71(2), 1997, pp. 240-242
Authors:
GRANDJEAN N
MASSIES J
VENNEGUES P
LAUGT M
LEROUX M
Citation: N. Grandjean et al., EPITAXIAL RELATIONSHIPS BETWEEN GAN AND AL2O3(0001) SUBSTRATES, Applied physics letters, 70(5), 1997, pp. 643-645
Authors:
BOUSQUET V
TOURNIE E
LAUGT M
VENNEGUES P
FAURIE JP
Citation: V. Bousquet et al., STRUCTURAL AND OPTICAL-PROPERTIES OF LATTICE-MATCHED ZNBESE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ONTO GAAS SUBSTRATES, Applied physics letters, 70(26), 1997, pp. 3564-3566
Authors:
TOURNIE E
MORHAIN C
NEU G
LAUGT M
ONGARETTO C
FAURIE JP
TRIBOULET R
NDAP JO
Citation: E. Tournie et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF ZNSE SINGLE-CRYSTALS GROWNBY SOLID-PHASE RECRYSTALLIZATION, Journal of applied physics, 80(5), 1996, pp. 2983-2989
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