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Results: 1-23 |
Results: 23
DYNAMIC IMAGES OF PLASMA PROCESSES - USE OF FOURIER BLOBS FOR END-POINT DETECTION DURING PLASMA-ETCHING OF PATTERNED WAFERS
Authors: RIETMAN EA LEE JTC LAYADI N
Citation: Ea. Rietman et al., DYNAMIC IMAGES OF PLASMA PROCESSES - USE OF FOURIER BLOBS FOR END-POINT DETECTION DURING PLASMA-ETCHING OF PATTERNED WAFERS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1449-1453
HALOGEN UPTAKE BY THIN SIO2 LAYERS ON EXPOSURE TO HBR O-2 AND CL-2 PLASMAS, INVESTIGATED BY VACUUM TRANSFER X-RAY PHOTOELECTRON-SPECTROSCOPY/
Authors: DONNELLY VM LAYADI N
Citation: Vm. Donnelly et N. Layadi, HALOGEN UPTAKE BY THIN SIO2 LAYERS ON EXPOSURE TO HBR O-2 AND CL-2 PLASMAS, INVESTIGATED BY VACUUM TRANSFER X-RAY PHOTOELECTRON-SPECTROSCOPY/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1571-1576
OPTICAL AND TRANSPORT-PROPERTIES OF AMORPHOUS AND MICROCRYSTALLINE SILICON FILMS PREPARED BY EXCIMER-LASER ASSISTED RF GLOW-DISCHARGE DEPOSITION
Authors: CABARROCAS PRI LAYADI N KUNST M CLERC C BERNAS H
Citation: Pri. Cabarrocas et al., OPTICAL AND TRANSPORT-PROPERTIES OF AMORPHOUS AND MICROCRYSTALLINE SILICON FILMS PREPARED BY EXCIMER-LASER ASSISTED RF GLOW-DISCHARGE DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 436-443
A NEW ALGORITHM FOR REAL-TIME THIN-FILM THICKNESS ESTIMATION GIVEN IN-SITU MULTIWAVELENGTH ELLIPSOMETRY USING AN EXTENDED KALMAN FILTER
Authors: GALARZA CG KHARGONEKAR PP LAYADI N VINCENT TL RIETMAN EA LEE JTC
Citation: Cg. Galarza et al., A NEW ALGORITHM FOR REAL-TIME THIN-FILM THICKNESS ESTIMATION GIVEN IN-SITU MULTIWAVELENGTH ELLIPSOMETRY USING AN EXTENDED KALMAN FILTER, Thin solid films, 313, 1998, pp. 156-160
PLASMA-ETCHING OF SUBMICRON DEVICES - IN-SITU MONITORING AND CONTROL BY MULTIWAVELENGTH ELLIPSOMETRY
Authors: MAYNARD HL LAYADI N LEE JTC
Citation: Hl. Maynard et al., PLASMA-ETCHING OF SUBMICRON DEVICES - IN-SITU MONITORING AND CONTROL BY MULTIWAVELENGTH ELLIPSOMETRY, Thin solid films, 313, 1998, pp. 398-405
GATE TECHNOLOGY FOR 70 NM METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH ULTRATHIN (LESS-THAN-2 NM) OXIDES
Authors: TENNANT D KLEMENS F SORSCH T BAUMANN F TIMP G LAYADI N KORNBLIT A SAPJETA BJ ROSAMILIA J BOONE T WEIR B SILVERMAN P
Citation: D. Tennant et al., GATE TECHNOLOGY FOR 70 NM METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH ULTRATHIN (LESS-THAN-2 NM) OXIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2799-2805
MULTIWAVELENGTH ELLIPSOMETRY FOR REAL-TIME PROCESS-CONTROL OF THE PLASMA-ETCHING OF PATTERNED SAMPLES
Authors: MAYNARD HL LAYADI N LEE JTC
Citation: Hl. Maynard et al., MULTIWAVELENGTH ELLIPSOMETRY FOR REAL-TIME PROCESS-CONTROL OF THE PLASMA-ETCHING OF PATTERNED SAMPLES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 109-115
CL-2 PLASMA-ETCHING OF SI(100) - DAMAGED SURFACE-LAYER STUDIED BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY
Authors: LAYADI N DONNELLY VM LEE JTC KLEMENS FP
Citation: N. Layadi et al., CL-2 PLASMA-ETCHING OF SI(100) - DAMAGED SURFACE-LAYER STUDIED BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 604-609
CL-2 PLASMA-ETCHING OF SI(100) - NATURE OF THE CHLORINATED SURFACE-LAYER STUDIED BY ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY
Authors: LAYADI N DONNELLY VM LEE JTC
Citation: N. Layadi et al., CL-2 PLASMA-ETCHING OF SI(100) - NATURE OF THE CHLORINATED SURFACE-LAYER STUDIED BY ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal of applied physics, 81(10), 1997, pp. 6738-6748
COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .5. POLYSILICON ETCHING RATE, UNIFORMITY, PROFILE CONTROL, AND BULK PLASMA PROPERTIES IN A HELICAL RESONATOR PLASMA SOURCE
Authors: LEE JTC LAYADI N GUINN KV MAYNARD HL KLEMENS FP IBBOTSON DE TEPERMEISTER I EGAN PO RICHARDSON RA
Citation: Jtc. Lee et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .5. POLYSILICON ETCHING RATE, UNIFORMITY, PROFILE CONTROL, AND BULK PLASMA PROPERTIES IN A HELICAL RESONATOR PLASMA SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2510-2518
MICROCRYSTALLINE SILICON GROWTH BY THE LAYER-BY-LAYER TECHNIQUE - LONG-TERM EVOLUTION AND NUCLEATION MECHANISMS
Authors: CABARROCAS PRI LAYADI N DREVILLON B SOLOMON I
Citation: Pri. Cabarrocas et al., MICROCRYSTALLINE SILICON GROWTH BY THE LAYER-BY-LAYER TECHNIQUE - LONG-TERM EVOLUTION AND NUCLEATION MECHANISMS, Journal of non-crystalline solids, 200, 1996, pp. 871-874
REAL-TIME SPECTROSCOPIC ELLIPSOMETRY STUDY OF THE GROWTH OF AMORPHOUSAND MICROCRYSTALLINE SILICON THIN-FILMS PREPARED BY ALTERNATING SILICON DEPOSITION AND HYDROGEN PLASMA TREATMENT
Authors: LAYADI N CABARROCAS PRI DREVILLON B SOLOMON I
Citation: N. Layadi et al., REAL-TIME SPECTROSCOPIC ELLIPSOMETRY STUDY OF THE GROWTH OF AMORPHOUSAND MICROCRYSTALLINE SILICON THIN-FILMS PREPARED BY ALTERNATING SILICON DEPOSITION AND HYDROGEN PLASMA TREATMENT, Physical review. B, Condensed matter, 52(7), 1995, pp. 5136-5143
CLUSTER IRRADIATION OF MULTILAYERS - MIXING BY ELECTRONIC-ENERGY DEPOSITION
Authors: LAYADI N BERNAS H GARRIDO G CHAUMONT J DUMOULIN L
Citation: N. Layadi et al., CLUSTER IRRADIATION OF MULTILAYERS - MIXING BY ELECTRONIC-ENERGY DEPOSITION, Physical review letters, 75(18), 1995, pp. 3301-3304
IN-SITU MEASUREMENTS OF CHANGES IN THE STRUCTURE AND IN THE EXCESS CHARGE-CARRIER KINETICS AT THE SILICON SURFACE DURING HYDROGEN AND HELIUM PLASMA EXPOSURE
Authors: NEITZERT HC LAYADI N CABARROCAS PRI VANDERHAGHEN R KUNST M
Citation: Hc. Neitzert et al., IN-SITU MEASUREMENTS OF CHANGES IN THE STRUCTURE AND IN THE EXCESS CHARGE-CARRIER KINETICS AT THE SILICON SURFACE DURING HYDROGEN AND HELIUM PLASMA EXPOSURE, Journal of applied physics, 78(3), 1995, pp. 1438-1445
SUBSTRATE SELECTIVITY IN THE FORMATION OF MICROCRYSTALLINE SILICON - MECHANISMS AND TECHNOLOGICAL CONSEQUENCES
Authors: CABARROCAS PRI LAYADI N HEITZ T DREVILLON B SOLOMON I
Citation: Pri. Cabarrocas et al., SUBSTRATE SELECTIVITY IN THE FORMATION OF MICROCRYSTALLINE SILICON - MECHANISMS AND TECHNOLOGICAL CONSEQUENCES, Applied physics letters, 66(26), 1995, pp. 3609-3611
ROLE OF MOBILE HYDROGEN IN THE AMORPHOUS-SILICON RECRYSTALLIZATION
Authors: GODET C LAYADI N CABARROCAS PRI
Citation: C. Godet et al., ROLE OF MOBILE HYDROGEN IN THE AMORPHOUS-SILICON RECRYSTALLIZATION, Applied physics letters, 66(23), 1995, pp. 3146-3148
EXCIMER-LASER-ASSISTED RF GLOW-DISCHARGE DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE SILICON THIN-FILMS
Authors: LAYADI N ICABARROCAS PR GERRI M MARINE W SPOUSTA J
Citation: N. Layadi et al., EXCIMER-LASER-ASSISTED RF GLOW-DISCHARGE DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE SILICON THIN-FILMS, Applied physics. A, Solids and surfaces, 58(5), 1994, pp. 507-512
IN-SITU MICROWAVE REFLECTIVITY MEASUREMENTS OF THE CHANGES IN SURFACERECOMBINATION OF CRYSTALLINE SILICON INDUCED BY THE EXPOSURE TO SILANE, SILANE HELIUM, AND HELIUM PLASMAS/
Authors: NEITZERT HC LAYADI N CABARROCAS PR VANDERHAGHEN R
Citation: Hc. Neitzert et al., IN-SITU MICROWAVE REFLECTIVITY MEASUREMENTS OF THE CHANGES IN SURFACERECOMBINATION OF CRYSTALLINE SILICON INDUCED BY THE EXPOSURE TO SILANE, SILANE HELIUM, AND HELIUM PLASMAS/, Applied physics letters, 65(10), 1994, pp. 1260-1262
EFFECTS OF UV-LIGHT ON THE DEPOSITION KINETICS AND OPTOELECTRONIC PROPERTIES OF A-SI-H FILMS DEPOSITED BY RF GLOW-DISCHARGE
Authors: LAYADI N CABARROCAS PRI YAKOVLEV V DREVILLON B
Citation: N. Layadi et al., EFFECTS OF UV-LIGHT ON THE DEPOSITION KINETICS AND OPTOELECTRONIC PROPERTIES OF A-SI-H FILMS DEPOSITED BY RF GLOW-DISCHARGE, Applied surface science, 69(1-4), 1993, pp. 262-266
STUDY BY REAL-TIME ELLIPSOMETRY OF THE GROWTH OF AMORPHOUS AND MICROCRYSTALLINE SILICON THIN-FILMS COMBINING GLOW-DISCHARGE DECOMPOSITION AND UV-LIGHT IRRADIATION
Authors: LAYADI N CABARROCAS PRI YAKOVLEV V DREVILLON B
Citation: N. Layadi et al., STUDY BY REAL-TIME ELLIPSOMETRY OF THE GROWTH OF AMORPHOUS AND MICROCRYSTALLINE SILICON THIN-FILMS COMBINING GLOW-DISCHARGE DECOMPOSITION AND UV-LIGHT IRRADIATION, Thin solid films, 233(1-2), 1993, pp. 281-285
PLASMA DEPOSITION OF MICROCRYSTALLINE SILICON - THE SELECTIVE ETCHINGMODEL
Authors: SOLOMON I DREVILLON B SHIRAI H LAYADI N
Citation: I. Solomon et al., PLASMA DEPOSITION OF MICROCRYSTALLINE SILICON - THE SELECTIVE ETCHINGMODEL, Journal of non-crystalline solids, 166, 1993, pp. 989-992
IN-SITU UV-VISIBLE AND INFRARED ELLIPSOMETRY STUDY OF THE INFLUENCE OF SILANE DILUTION ON THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON
Authors: SHIRAI H DREVILLON B LAYADI N CABARROCAS PRI
Citation: H. Shirai et al., IN-SITU UV-VISIBLE AND INFRARED ELLIPSOMETRY STUDY OF THE INFLUENCE OF SILANE DILUTION ON THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON, Journal of non-crystalline solids, 166, 1993, pp. 119-122
REAL-TIME SPECTROELLIPSOMETRY INVESTIGATION OF THE INTERACTION OF SILANE WITH A PD THIN-FILM - FORMATION OF PALLADIUM SILICIDES
Authors: YAKOVLEV V DREVILLON B LAYADI N CABARROCAS PR
Citation: V. Yakovlev et al., REAL-TIME SPECTROELLIPSOMETRY INVESTIGATION OF THE INTERACTION OF SILANE WITH A PD THIN-FILM - FORMATION OF PALLADIUM SILICIDES, Journal of applied physics, 74(4), 1993, pp. 2535-2542
Risultati: 1-23 |