Authors:
LEBIHAN F
FORTIN B
CAUNEAU S
BRIAND D
BONNAUD O
Citation: F. Lebihan et al., CHARACTERIZATION OF UNINTENTIONALLY OR LIGHTLY DOPED POLYSILICON FILMS BY IMPROVED HALL-EFFECT MEASUREMENTS, Thin solid films, 301(1-2), 1997, pp. 230-235
Authors:
KISSION K
MOHAMMEDBRAHIM T
BRIAND D
SARRET M
LEBIHAN F
FORTIN B
BONNAUD O
BOHER P
STEHLE M
STEHLE JL
Citation: K. Kission et al., SINGLE-SHOT EXCIMER-LASER CRYSTALLIZATION OF SILICON FILMS DEPOSITED BY LPCVD, Thin solid films, 296(1-2), 1997, pp. 53-56
Authors:
BRIAND D
SARRET M
LEBIHAN F
BONNAUD O
PICHON L
Citation: D. Briand et al., POLYSILICON IN-SITU PHOSPHORUS DOPING CONTROL OVER LARGE CONCENTRATION RANGE USING LOW-TEMPERATURE, LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION GROWTH-PROCESS, Materials science and technology, 11(11), 1995, pp. 1207-1209
Authors:
SARRET M
LIBA A
BONNAUD O
LEBIHAN F
FORTIN B
PICHON L
RAOULT F
Citation: M. Sarret et al., IN-SITU PHOSPHORUS-DOPED VLPCVD POLYSILICON LAYERS FOR POLYSILICON THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 19-22
Authors:
SARRET M
LIBA A
LEBIHAN F
JOUBERT P
FORTIN B
Citation: M. Sarret et al., N-TYPE POLYCRYSTALLINE SILICON FILMS OBTAINED BY CRYSTALLIZATION OF IN-SITU PHOSPHORUS-DOPED AMORPHOUS-SILICON FILMS DEPOSITED AT LOW-PRESSURE, Journal of applied physics, 76(9), 1994, pp. 5492-5497
Authors:
SARRET M
LIBA A
BONNAUD O
LEBIHAN F
FORTIN B
Citation: M. Sarret et al., COMPARISON OF PHYSICAL AND ELECTRICAL-PROPERTIES OF ULPCVD AND VLPCVDIN-SITU PHOSPHORUS-DOPED POLYSILICON OR UNDOPED POLYSILICON, Journal de physique. IV, 3(C3), 1993, pp. 411-417