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Results: 1-6 |
Results: 6

Authors: LEBIHAN F FORTIN B CAUNEAU S BRIAND D BONNAUD O
Citation: F. Lebihan et al., CHARACTERIZATION OF UNINTENTIONALLY OR LIGHTLY DOPED POLYSILICON FILMS BY IMPROVED HALL-EFFECT MEASUREMENTS, Thin solid films, 301(1-2), 1997, pp. 230-235

Authors: KISSION K MOHAMMEDBRAHIM T BRIAND D SARRET M LEBIHAN F FORTIN B BONNAUD O BOHER P STEHLE M STEHLE JL
Citation: K. Kission et al., SINGLE-SHOT EXCIMER-LASER CRYSTALLIZATION OF SILICON FILMS DEPOSITED BY LPCVD, Thin solid films, 296(1-2), 1997, pp. 53-56

Authors: BRIAND D SARRET M LEBIHAN F BONNAUD O PICHON L
Citation: D. Briand et al., POLYSILICON IN-SITU PHOSPHORUS DOPING CONTROL OVER LARGE CONCENTRATION RANGE USING LOW-TEMPERATURE, LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION GROWTH-PROCESS, Materials science and technology, 11(11), 1995, pp. 1207-1209

Authors: SARRET M LIBA A BONNAUD O LEBIHAN F FORTIN B PICHON L RAOULT F
Citation: M. Sarret et al., IN-SITU PHOSPHORUS-DOPED VLPCVD POLYSILICON LAYERS FOR POLYSILICON THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 19-22

Authors: SARRET M LIBA A LEBIHAN F JOUBERT P FORTIN B
Citation: M. Sarret et al., N-TYPE POLYCRYSTALLINE SILICON FILMS OBTAINED BY CRYSTALLIZATION OF IN-SITU PHOSPHORUS-DOPED AMORPHOUS-SILICON FILMS DEPOSITED AT LOW-PRESSURE, Journal of applied physics, 76(9), 1994, pp. 5492-5497

Authors: SARRET M LIBA A BONNAUD O LEBIHAN F FORTIN B
Citation: M. Sarret et al., COMPARISON OF PHYSICAL AND ELECTRICAL-PROPERTIES OF ULPCVD AND VLPCVDIN-SITU PHOSPHORUS-DOPED POLYSILICON OR UNDOPED POLYSILICON, Journal de physique. IV, 3(C3), 1993, pp. 411-417
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